Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source
文献类型：期刊论文
| 作者 | Shang, XZ ; Guo, LW ; Wu, SD ; Niu, PJ ; Huang, Q ; Zhou, JM |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2004 |
| 卷号 | 262期号:1-4页码:14 |
| 关键词 | VAPOR-PHASE EPITAXY TEMPERATURE GAINP PHOTOLUMINESCENCE HETEROSTRUCTURES GA0.52IN0.48P DEPENDENCE ENERGY GROWTH |
| ISSN号 | 0022-0248 |
| 通讯作者 | Shang, XZ (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Photoluminescence (PL) spectra and Raman spectra have been utilized to study the optical properties of epitaxial InGaP grown on (0 0 1) GaAs substrate by solid-source molecular beam epitaxy with a GaP decomposition source. The 15 K PL spectrum of 3 mum-thick InGaP epilayer grown under optimized conditions (T-s = 460degreesC, V/III 15) shows that the PL peak energy is as high as 1.998 ev and the PL full-width at half-maximum is 5.26 meV, which is the narrowest value reported. The temperature dependence of PL spectrum exhibits normal behavior. The Raman scattering spectrum at room temperature shows the ratio b/a, where b and a represent the valley depth between the GaP- and InP-like LO peak and the InNike LO peak height, respectively, is as high as 0.45, which is near the largest value ever reported. All these results demonstrate that the InGaP grown under optimized conditions (T-S = 460degreesC, V/III = 15) by solid-source molecular beam epitaxy with a GaP decomposition source is highly disordered. (C) 2003 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50335]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Shang, XZ,Guo, LW,Wu, SD,et al. Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source[J]. JOURNAL OF CRYSTAL GROWTH,2004,262(1-4):14. |
| APA | Shang, XZ,Guo, LW,Wu, SD,Niu, PJ,Huang, Q,&Zhou, JM.(2004).Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source.JOURNAL OF CRYSTAL GROWTH,262(1-4),14. |
| MLA | Shang, XZ,et al."Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source".JOURNAL OF CRYSTAL GROWTH 262.1-4(2004):14. |
入库方式： OAI收割
来源：物理研究所
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