Optical transition in SiGe self-organized dots
文献类型：期刊论文
| 作者 | Chen, H ; Cheng, WQ ; Xie, XG ; Huang, Q ; Zhou, JM |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 1997 |
| 卷号 | 70期号:4页码:446 |
| 关键词 | MOLECULAR-BEAM EPITAXY PHOTOLUMINESCENCE GROWTH GE SUPERLATTICES SI(100) LAYERS STRAIN |
| ISSN号 | 0003-6951 |
| 中文摘要 | It is found that the SiGe alloy self-organizers into uniform quantum dots embedded in the Si layer during the growth of a strained Si/Ge short period superlattice on a Si(001) substrate at a temperature of 800 degrees C by molecular beam epitaxy. The peak of photoluminescence from the quantum dots is at an energy higher than the band gap of Si. The intensity is two orders of magnitude higher than that of SiGe/Si quantum well. (C) 1997 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50372]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, H,Cheng, WQ,Xie, XG,et al. Optical transition in SiGe self-organized dots[J]. APPLIED PHYSICS LETTERS,1997,70(4):446. |
| APA | Chen, H,Cheng, WQ,Xie, XG,Huang, Q,&Zhou, JM.(1997).Optical transition in SiGe self-organized dots.APPLIED PHYSICS LETTERS,70(4),446. |
| MLA | Chen, H,et al."Optical transition in SiGe self-organized dots".APPLIED PHYSICS LETTERS 70.4(1997):446. |
入库方式： OAI收割
来源：物理研究所
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