中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Optimal designs for high-power vertical cavity surface emitting lasers

文献类型:期刊论文

作者Li, HQ ; Zhang, H ; Cui, DF ; Xu, ZY ; Ning, YQ ; Yan, CU ; Qin, L ; Liu, Y ; Wang, LJ ; Cao, JL
刊名ACTA PHYSICA SINICA
出版日期2004
卷号53期号:9页码:2986
关键词OUTPUT POWER VCSELS CW
ISSN号1000-3290
通讯作者Li, HQ (reprint author), Chinese Acad Sci, Inst Phys, Lab Opt Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要Vertical cavity surface emitting lasers (VCSEL's) lase in a single longitudinal mode, have a circularly symmetric output beam that can be very tightly focused, offer extremely high coupling efficiencies into optical fiber, and can be mass produced in two - dimensional arrays relative to the conventional edge-emitting semiconductor laser. To obtain a high optical output power, besides enlarging of VCSEL's lasing area, the key points are proper number of quantum wells, homogeneous distribution of current density in the active layer and good thermal control. The dependence of VCSEL's performance on the number of quantum wells, the active diameter, the thermal conductivity and the electric resistance of the material; and the distance between electrical contacts are investigated. By optimizing the design parameters for a 980 nm In0.2Ga0.8As/GaAs VCSEL, a maximum continuous wave (cw) output power of 1.95 W at room temperature is obtained, which to our knowledge is the highest cw output power of any single VCSEL so far.
收录类别SCI
语种中文
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/50392]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
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GB/T 7714
Li, HQ,Zhang, H,Cui, DF,et al. Optimal designs for high-power vertical cavity surface emitting lasers[J]. ACTA PHYSICA SINICA,2004,53(9):2986.
APA Li, HQ.,Zhang, H.,Cui, DF.,Xu, ZY.,Ning, YQ.,...&Cao, JL.(2004).Optimal designs for high-power vertical cavity surface emitting lasers.ACTA PHYSICA SINICA,53(9),2986.
MLA Li, HQ,et al."Optimal designs for high-power vertical cavity surface emitting lasers".ACTA PHYSICA SINICA 53.9(2004):2986.

入库方式: OAI收割

来源:物理研究所

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