Optoelectronic characteristics and field emission properties of indium-doped tin oxide nanowire arrays
文献类型：期刊论文
| 作者 | Xue, XY ; Shi, SL ; Lin, ZX ; Zheng, KL ; Zhang, YA ; Guo, TL ; Wang, TH |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2007 |
| 卷号 | 24期号:12页码:3492 |
| ISSN号 | 0256-307X |
| 中文摘要 | Under optimized operating parameters, a hard and wear resistant ( Ti,Al)N film is prepared on a normalized T8 carbon tool steel substrate by using pulsed high energy density plasma technique. Microstructure and composition of the film are analysed by x-ray diffraction, x-ray photoelectron spectroscopy, Auger electron spectroscopy and scanning electron microscopy. Hardness profile and tribological properties of the film are tested with nano-indenter and ring-on-ring wear tester, respectively. The tested results show that the microstructure of the film is dense and uniform and is mainly composed of ( Ti,Al)N and AlN hard phases. A wide transition interface exists between the film and the normalized T8 carbon tool steel substrate. Thickness of the film is about 1000 nm and mean hardness value of the film is about 26GPa. Under dry sliding wear test conditions, relative wear resistance of the ( Ti,Al)N film is approximately 9 times higher than that of the hardened T8 carbon tool steel reference sample. Meanwhile, the ( Ti,Al)N film has low and stable friction coefficient compared with the hardened T8 carbon tool steel reference sample. |
| 收录类别 | SCI |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50411]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xue, XY,Shi, SL,Lin, ZX,et al. Optoelectronic characteristics and field emission properties of indium-doped tin oxide nanowire arrays[J]. CHINESE PHYSICS LETTERS,2007,24(12):3492. |
| APA | Xue, XY.,Shi, SL.,Lin, ZX.,Zheng, KL.,Zhang, YA.,...&Wang, TH.(2007).Optoelectronic characteristics and field emission properties of indium-doped tin oxide nanowire arrays.CHINESE PHYSICS LETTERS,24(12),3492. |
| MLA | Xue, XY,et al."Optoelectronic characteristics and field emission properties of indium-doped tin oxide nanowire arrays".CHINESE PHYSICS LETTERS 24.12(2007):3492. |
入库方式： OAI收割
来源：物理研究所
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