Orbital-Selective Mott Transition out of Band Degeneracy Lifting
文献类型：期刊论文
| 作者 | de Medici, L ; Hassan, SR ; Capone, M ; Dai, X |
| 刊名 | PHYSICAL REVIEW LETTERS
 |
| 出版日期 | 2009 |
| 卷号 | 102期号:12 |
| 关键词 | 2-BAND HUBBARD-MODEL INSULATOR-TRANSITION |
| ISSN号 | 0031-9007 |
| 通讯作者 | de Medici, L (reprint author), Rutgers State Univ, Dept Phys, Piscataway, NJ 08854 USA. |
| 中文摘要 | We outline a general mechanism for orbital-selective Mott transition, the coexistence of both itinerant and localized conduction electrons, and show how it can take place in a wide range of realistic situations, even for bands of identical width and correlation, provided a crystal field splits the energy levels in manifolds with different degeneracies and the exchange coupling is large enough to reduce orbital fluctuations. The mechanism relies on the different kinetic energy in manifolds with different degeneracy. This phase has Curie-Weiss susceptibility and non-Fermi-liquid behavior, which disappear at a critical doping, all of which is reminiscent of the physics of the pnictides. |
| 收录类别 | SCI |
| 资助信息 | Center for Materials Theory of Rutgers University, NSERC (Canada); Italian MIUR PRIN; NSF of China; 973 program of China [2007CB925000] |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50426]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | de Medici, L,Hassan, SR,Capone, M,et al. Orbital-Selective Mott Transition out of Band Degeneracy Lifting[J]. PHYSICAL REVIEW LETTERS,2009,102(12). |
| APA | de Medici, L,Hassan, SR,Capone, M,&Dai, X.(2009).Orbital-Selective Mott Transition out of Band Degeneracy Lifting.PHYSICAL REVIEW LETTERS,102(12). |
| MLA | de Medici, L,et al."Orbital-Selective Mott Transition out of Band Degeneracy Lifting".PHYSICAL REVIEW LETTERS 102.12(2009). |
入库方式： OAI收割
来源：物理研究所
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