Ordered Ga wires formed on Si(100)-2xn: Scanning tunneling microscopy study
文献类型：期刊论文
| 作者 | Wang, JZ ; Jia, JF ; Liu, X ; Chen, WD ; Xue, QK |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2002 |
| 卷号 | 65期号:23 |
| 关键词 | LOW-COVERAGE PHASES NANOWIRE ARRAY SURFACE SI(001) GROWTH INDIUM ADSORPTION GALLIUM AL RECONSTRUCTION |
| ISSN号 | 1098-0121 |
| 通讯作者 | Wang, JZ (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Using the nanostructrued Si(100)-2xn surface as a template, we have obtained large-scale well-aligned Ga nanowire arrays. High-resolution scanning tunneling microscopy (STM) images reveal that the deposited Ga atoms adsorb predominantly on top of the Si(100)-2x1 dimer rows and form a stable local 2x2 structure so as effectively to remove Si dangling bonds states and saturate all Ga electron valency, a vital step that leads to the success of the method. An interesting observation is the formation of antiphase boundaries on the 2x2-Ga phase. In this case, zigzag patterns were observed in the filled-state STM images, which provides further evidence for the parallel dimer model of the 2x2-Ga reconstruction proposed previously. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50437]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, JZ,Jia, JF,Liu, X,et al. Ordered Ga wires formed on Si(100)-2xn: Scanning tunneling microscopy study[J]. PHYSICAL REVIEW B,2002,65(23). |
| APA | Wang, JZ,Jia, JF,Liu, X,Chen, WD,&Xue, QK.(2002).Ordered Ga wires formed on Si(100)-2xn: Scanning tunneling microscopy study.PHYSICAL REVIEW B,65(23). |
| MLA | Wang, JZ,et al."Ordered Ga wires formed on Si(100)-2xn: Scanning tunneling microscopy study".PHYSICAL REVIEW B 65.23(2002). |
入库方式： OAI收割
来源：物理研究所
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