Ordered ultra thin ZnO films on metal substrate
文献类型：期刊论文
| 作者 | Guo, DH ; Xue, MS ; Guo, QL ; Wu, KH ; Guo, JD ; Wang, EG |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2009 |
| 卷号 | 255期号:22页码:9015 |
| 关键词 | ENERGY-LOSS-SPECTROSCOPY RESOLVED PHOTOEMISSION-SPECTROSCOPY SINGLE-CRYSTALLINE ZNO X-RAY PHOTOEMISSION MGO BUFFER LAYER ELECTRONIC-STRUCTURE GROWTH SURFACE SAPPHIRE ZINC |
| ISSN号 | 0169-4332 |
| 通讯作者 | Guo, QL (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100190, Peoples R China. |
| 中文摘要 | Ultra thin ZnO films were prepared on metal Mo(1 1 0) substrate under ultrahigh vacuum conditions either by depositing Zn in similar to 10 (5) Pa oxygen or by oxidizing pre-deposited Zn films. The films were characterized in situ by various surface analytical techniques, including Auger electron spectroscopy, Xray and ultraviolet photoelectron spectroscopies, low energy electron diffraction and high resolution electron energy loss spectroscopy. The results indicate that a long-range ordered and stoichiometric ZnO films are formed along its [0 0 0 1] direction. The annealing experiments show that as-prepared ZnO films are thermal stable until 800 K. This study provides constructive information to further understand the growth mechanism of ZnO films on different substrates. (C) 2009 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 资助信息 | National Science Foundation of China [20873177]; 973 Project [2007CB936800] |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50444]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Guo, DH,Xue, MS,Guo, QL,et al. Ordered ultra thin ZnO films on metal substrate[J]. APPLIED SURFACE SCIENCE,2009,255(22):9015. |
| APA | Guo, DH,Xue, MS,Guo, QL,Wu, KH,Guo, JD,&Wang, EG.(2009).Ordered ultra thin ZnO films on metal substrate.APPLIED SURFACE SCIENCE,255(22),9015. |
| MLA | Guo, DH,et al."Ordered ultra thin ZnO films on metal substrate".APPLIED SURFACE SCIENCE 255.22(2009):9015. |
入库方式： OAI收割
来源：物理研究所
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