中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
ORIENTATION INFLUENCE OF CUBIC BORON-NITRIDE CRYSTAL FACETS ON THE EPITAXIAL-GROWTH OF DIAMOND FILM BY MICROWAVE PLASMA CHEMICAL-VAPOR-DEPOSITION

文献类型:期刊论文

作者CHAI, WP ; GU, YS ; LI, M ; MAI, ZH ; LI, QZ ; YUAN, L ; PANG, SJ
刊名JOURNAL OF CRYSTAL GROWTH
出版日期1994
卷号135期号:3-4页码:639
ISSN号0022-0248
通讯作者CHAI, WP (reprint author), CHINESE ACAD SCI,INST PHYS,POB 603-79,BEIJING 100080,PEOPLES R CHINA.
中文摘要The time and field sweep rate dependencies of magnetization in high temperature superconductors are derived from a combined view based on the thermally activated flux creep. The tau(0) in the magnetization relaxation expression M=M(0)+M(1) ln(1+t/tau(0)) is a macroscopic quantity related primarily to the sample geometry and other experimental conditions via the effective activation energy U(J(0)). This activation energy provides an alternative interpretation to the nearly inverse proportionality of tau(0) to the field sweep rate. The values of tau(0), in the magnetization relaxation of single crystal YBa2Cu3O7-delta are consistent with the calculated ones. As the nonlinear U(J) is taken into account, the curvature in the \M\-ln t plot may change from negative to positive over a sufficiently long time window, and the magnetization hysteresis M(H) depends on the field sweep rate H by const+A ln H+B ln(2) H, where A is slightly larger than M(1) and B>0. A discussion of the temperature dependency of the normalized flux creep rate is at the conclusion of the article.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/50456]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
CHAI, WP,GU, YS,LI, M,et al. ORIENTATION INFLUENCE OF CUBIC BORON-NITRIDE CRYSTAL FACETS ON THE EPITAXIAL-GROWTH OF DIAMOND FILM BY MICROWAVE PLASMA CHEMICAL-VAPOR-DEPOSITION[J]. JOURNAL OF CRYSTAL GROWTH,1994,135(3-4):639.
APA CHAI, WP.,GU, YS.,LI, M.,MAI, ZH.,LI, QZ.,...&PANG, SJ.(1994).ORIENTATION INFLUENCE OF CUBIC BORON-NITRIDE CRYSTAL FACETS ON THE EPITAXIAL-GROWTH OF DIAMOND FILM BY MICROWAVE PLASMA CHEMICAL-VAPOR-DEPOSITION.JOURNAL OF CRYSTAL GROWTH,135(3-4),639.
MLA CHAI, WP,et al."ORIENTATION INFLUENCE OF CUBIC BORON-NITRIDE CRYSTAL FACETS ON THE EPITAXIAL-GROWTH OF DIAMOND FILM BY MICROWAVE PLASMA CHEMICAL-VAPOR-DEPOSITION".JOURNAL OF CRYSTAL GROWTH 135.3-4(1994):639.

入库方式: OAI收割

来源:物理研究所

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