中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition

文献类型:期刊论文

作者Chen, QJ ; Chen, Y ; Yang, J ; Lin, ZD
刊名THIN SOLID FILMS
出版日期1996
卷号274期号:1-2页码:160
关键词BIAS-ENHANCED NUCLEATION THIN-FILMS CRYSTALLOGRAPHIC ORIENTATIONS RAMAN MICROPROBE 100 SILICON SURFACE MORPHOLOGY
ISSN号0040-6090
通讯作者Chen, QJ (reprint author), UNIV CHICAGO,DEPT PHYS,5720 S ELLIS AVE,CHICAGO,IL 60637, USA.
中文摘要A very low pressure (13 Pa), high substrate temperature and a.c. discharge for the nucleation siage have been applied. Uniformly oriented and textured growth of (111) diamond (dia) with dia(111)//Si(111) and dia<<1(1)over bar>0>//Si<<1(1)over bar>0> has been achieved on not only well polished but also scratched silicon substrates using hot filament chemical vapor deposition. A probable explanation, heteroepitaxy, was hypothesized. The as-grown diamond films were characterized by Raman spectroscopy, scanning electron microscopy, and X-ray analysis.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/50466]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Chen, QJ,Chen, Y,Yang, J,et al. Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition[J]. THIN SOLID FILMS,1996,274(1-2):160.
APA Chen, QJ,Chen, Y,Yang, J,&Lin, ZD.(1996).Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition.THIN SOLID FILMS,274(1-2),160.
MLA Chen, QJ,et al."Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition".THIN SOLID FILMS 274.1-2(1996):160.

入库方式: OAI收割

来源:物理研究所

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