Origin of high-speed modification of refractive index in fused quartz by vacuum ultraviolet laser irradiation
文献类型:期刊论文
作者 | Zhang, J ; Sugioka, K ; Wada, S ; Tashiro, H ; Toyoda, K ; Ruschin, S |
刊名 | IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
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出版日期 | 1997 |
卷号 | 3期号:3页码:789 |
关键词 | ND-YAG LASER SILICA ABLATION GLASS |
ISSN号 | 1077-260X |
通讯作者 | Zhang, J (reprint author), RIKEN,INST PHYS & CHEM RES,WAKO,SAITAMA 35101,JAPAN. |
中文摘要 | We report on high-speed modification and a large change of the refractive index on the order of 10(-2) of fused quartz upon vacuum ultraviolet (VUV) laser irradiation. The origin of the large refractive index change is discussed based on the laser-induced color center and surface morphology changes. The VUV-UV absorption spectrum of modified samples indicates the formation of a color center at around 163 nm (=Si-Si= defect), which is attributed to bond scission of fused quartz by VUV laser-induced electron excitation. On the other hand, simultaneous UV laser irradiation in our present experimental scheme is responsible for the generation of a surface damage at the large number of pulses, which causes scattering and deterioration of the optical properties of the irradiated regions. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-24 |
源URL | [http://ir.iphy.ac.cn/handle/311004/50475] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Zhang, J,Sugioka, K,Wada, S,et al. Origin of high-speed modification of refractive index in fused quartz by vacuum ultraviolet laser irradiation[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS,1997,3(3):789. |
APA | Zhang, J,Sugioka, K,Wada, S,Tashiro, H,Toyoda, K,&Ruschin, S.(1997).Origin of high-speed modification of refractive index in fused quartz by vacuum ultraviolet laser irradiation.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS,3(3),789. |
MLA | Zhang, J,et al."Origin of high-speed modification of refractive index in fused quartz by vacuum ultraviolet laser irradiation".IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 3.3(1997):789. |
入库方式: OAI收割
来源:物理研究所
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