中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Origin of high-speed modification of refractive index in fused quartz by vacuum ultraviolet laser irradiation

文献类型:期刊论文

作者Zhang, J ; Sugioka, K ; Wada, S ; Tashiro, H ; Toyoda, K ; Ruschin, S
刊名IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
出版日期1997
卷号3期号:3页码:789
关键词ND-YAG LASER SILICA ABLATION GLASS
ISSN号1077-260X
通讯作者Zhang, J (reprint author), RIKEN,INST PHYS & CHEM RES,WAKO,SAITAMA 35101,JAPAN.
中文摘要We report on high-speed modification and a large change of the refractive index on the order of 10(-2) of fused quartz upon vacuum ultraviolet (VUV) laser irradiation. The origin of the large refractive index change is discussed based on the laser-induced color center and surface morphology changes. The VUV-UV absorption spectrum of modified samples indicates the formation of a color center at around 163 nm (=Si-Si= defect), which is attributed to bond scission of fused quartz by VUV laser-induced electron excitation. On the other hand, simultaneous UV laser irradiation in our present experimental scheme is responsible for the generation of a surface damage at the large number of pulses, which causes scattering and deterioration of the optical properties of the irradiated regions.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/50475]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Zhang, J,Sugioka, K,Wada, S,et al. Origin of high-speed modification of refractive index in fused quartz by vacuum ultraviolet laser irradiation[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS,1997,3(3):789.
APA Zhang, J,Sugioka, K,Wada, S,Tashiro, H,Toyoda, K,&Ruschin, S.(1997).Origin of high-speed modification of refractive index in fused quartz by vacuum ultraviolet laser irradiation.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS,3(3),789.
MLA Zhang, J,et al."Origin of high-speed modification of refractive index in fused quartz by vacuum ultraviolet laser irradiation".IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 3.3(1997):789.

入库方式: OAI收割

来源:物理研究所

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