Origin of nanoscale potential fluctuations in two-dimensional semiconductors
文献类型：期刊论文
| 作者 | Landrock, S ; Jiang, Y ; Wu, KH ; Wang, EG ; Urban, K ; Ebert, P |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2009 |
| 卷号 | 95期号:7 |
| 关键词 | SURFACES DEFECTS STATES GAAS |
| ISSN号 | 0003-6951 |
| 通讯作者 | Landrock, S (reprint author), Forschungszentrum Julich, Inst Festkorperforsch, Postfach 1913, D-52425 Julich, Germany. |
| 中文摘要 | We demonstrate a direct atomically resolved visualization and quantification of the impact of inhomogeneities in the dopant distribution on the nanoscale potential fluctuations in a two-dimensional semiconducting root 3 x root 3 Ga overlayer on Si(111) using scanning tunneling microscopy. By a quantitative analysis, two regimes of the potential at nanometer scale are found, which arise from the local distribution of charge carriers in the bands and from electron-electron interactions. (C) 2009 American Institute of Physics. [DOI:10.1063/1.3177329] |
| 收录类别 | SCI |
| 资助信息 | Deutsche Forschungsgemeinschaft; GIF |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50476]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Landrock, S,Jiang, Y,Wu, KH,et al. Origin of nanoscale potential fluctuations in two-dimensional semiconductors[J]. APPLIED PHYSICS LETTERS,2009,95(7). |
| APA | Landrock, S,Jiang, Y,Wu, KH,Wang, EG,Urban, K,&Ebert, P.(2009).Origin of nanoscale potential fluctuations in two-dimensional semiconductors.APPLIED PHYSICS LETTERS,95(7). |
| MLA | Landrock, S,et al."Origin of nanoscale potential fluctuations in two-dimensional semiconductors".APPLIED PHYSICS LETTERS 95.7(2009). |
入库方式： OAI收割
来源：物理研究所
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