Origin of selective growth of GaN on maskless V-grooved sapphire substrates by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Wang, J ; Guo, LW ; Jia, HQ ; Xing, ZG ; Wang, Y ; Chen, H ; Zhou, JM |
| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
 |
| 出版日期 | 2005 |
| 卷号 | 44期号:28-32页码:L982 |
| 关键词 | EPITAXIAL LATERAL OVERGROWTH DENSITY GAN GALLIUM NITRIDE DIODES LAYER |
| ISSN号 | 0021-4922 |
| 通讯作者 | Guo, LW (reprint author), Chinese Acad Sci, State Key Lab Surface Phys, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Selective growth of GaN on maskless V-grooved sapphire substrate is found by metalorganic chemical vapor deposition (MOCVD), where the V-grooved sapphire substrate is fabricated by chemical wet etching. GaN layers grow only on the (0001) mesas and no GaN growth occurs on the {110k} sidewalls of the V-grooves. The origin of the selective growth of GaN is unveiled and analyzed by energy dispersive X-ray (EDX) spectroscopy mapping. It is found that, Ga migration rates on the different facets are different clearly at high temperatures (HTs) so that the selective growth occurs. Contrary to the situation of HTs, GaN nucleates uniformly on the mesas and sidewalls at low temperatures (LTs) without selectivity. Thus, it is concluded that the selective growth of GaN on sapphire facets is a kinetic limited process. Accordingly, it is possible to fabricate GaN-based nanostructures by controlling the growth conditions. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50478]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, J,Guo, LW,Jia, HQ,et al. Origin of selective growth of GaN on maskless V-grooved sapphire substrates by metalorganic chemical vapor deposition[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,2005,44(28-32):L982. |
| APA | Wang, J.,Guo, LW.,Jia, HQ.,Xing, ZG.,Wang, Y.,...&Zhou, JM.(2005).Origin of selective growth of GaN on maskless V-grooved sapphire substrates by metalorganic chemical vapor deposition.JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,44(28-32),L982. |
| MLA | Wang, J,et al."Origin of selective growth of GaN on maskless V-grooved sapphire substrates by metalorganic chemical vapor deposition".JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44.28-32(2005):L982. |
入库方式： OAI收割
来源：物理研究所
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