Origin of spin-valve magnetoresistance: Interface or bulk spin-dependent scattering?
文献类型：期刊论文
| 作者 | Xu, M ; Mai, ZH ; Xu, HB ; Gong, SK |
| 刊名 | PHYSICS OF LOW-DIMENSIONAL STRUCTURES
 |
| 出版日期 | 2000 |
| 卷号 | 11页码:51 |
| 关键词 | GIANT MAGNETORESISTANCE ANGULAR-DEPENDENCE MULTILAYERS MAGNETOTRANSPORT SANDWICHES THICKNESSES |
| ISSN号 | 0204-3467 |
| 通讯作者 | Xu, M (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | We fabricated GaAs metal-semiconductor Schottky diodes containing InAs self-assembled quantum dots. Current transport characteristics were measured at 77 K. Current peaks and negative differential resistance had been observed under reverse bias in some diodes. The second derivatives of the current of all diodes show clear dips. All these structures were interpreted as being due to the resonant tunneling through the zero-dimensional energy states of InAs quantum dots. Three bound states can be clearly observed for most of the diodes. The energy gaps between the bound states of quantum dots were roughly estimated from the dips to be about 50-80 meV. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50480]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xu, M,Mai, ZH,Xu, HB,et al. Origin of spin-valve magnetoresistance: Interface or bulk spin-dependent scattering?[J]. PHYSICS OF LOW-DIMENSIONAL STRUCTURES,2000,11:51. |
| APA | Xu, M,Mai, ZH,Xu, HB,&Gong, SK.(2000).Origin of spin-valve magnetoresistance: Interface or bulk spin-dependent scattering?.PHYSICS OF LOW-DIMENSIONAL STRUCTURES,11,51. |
| MLA | Xu, M,et al."Origin of spin-valve magnetoresistance: Interface or bulk spin-dependent scattering?".PHYSICS OF LOW-DIMENSIONAL STRUCTURES 11(2000):51. |
入库方式： OAI收割
来源：物理研究所
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