Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111)
文献类型：期刊论文
| 作者 | Pang, F ; Liang, XJ ; Liao, ZL ; Yin, SL ; Chen, DM |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2010 |
| 卷号 | 19期号:8 |
| 关键词 | BISMUTH THIN-FILMS TO-SEMICONDUCTOR TRANSITION PHOTOEMISSION TEMPERATURE |
| ISSN号 | 1674-1056 |
| 通讯作者 | Liang, XJ (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Transport characteristics of single crystal bismuth films on Si(111)-7x7 are found to be metallic or insulating at temperature below or above T(C), respectively. The transition temperature T(C) decreases as the film thickness increases. By combining thickness dependence of the films resistivity, we find the insulating behaviour results from the states inside film, while the metallic behaviour originates from the interface states. We show that quantum size effect in a Bi film, such as the semimetal-to-semiconductor transition, is only observable at a temperature higher than T(C). |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [10874217, 10427402]; National Basic Research Program of China (973 Program) [2006CB933000] |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50485]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Pang, F,Liang, XJ,Liao, ZL,et al. Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111)[J]. CHINESE PHYSICS B,2010,19(8). |
| APA | Pang, F,Liang, XJ,Liao, ZL,Yin, SL,&Chen, DM.(2010).Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111).CHINESE PHYSICS B,19(8). |
| MLA | Pang, F,et al."Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111)".CHINESE PHYSICS B 19.8(2010). |
入库方式： OAI收割
来源：物理研究所
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