Oscillatory electron phonon coupling in Pb/Si(111) deduced by temperature-dependent quantum well states
文献类型：期刊论文
| 作者 | Zhang, YF ; Jia, JF ; Han, TZ ; Tang, Z ; Shen, QT ; Guo, Y ; Xue, QK |
| 刊名 | CHINESE PHYSICS
 |
| 出版日期 | 2005 |
| 卷号 | 14期号:9页码:1910 |
| 关键词 | ANGLE-RESOLVED PHOTOEMISSION FILMS SUPERCONDUCTORS |
| ISSN号 | 1009-1963 |
| 通讯作者 | Zhang, YF (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Photoemission study of atomically flat Pb films with a thickness from 15 to 24 monolayers (ML) have been performed within a temperature range 75-270K. Well-defined quantum well states (QWSs) are observed, which exhibit interesting temperature-dependent behaviours. The peak position of the QWSs shifts towards higher binding energy with increasing substrate temperature, whereas the peak width broadens linearly due to enhanced electron-phonon coupling strength (lambda). An oscillatory lambda with a period of 2ML is deduced. Preliminary analysis shows that the oscillation can be explained in terms of the interface induced phase variations, and is thus a manifestation of the quantum size effects. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50512]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, YF,Jia, JF,Han, TZ,et al. Oscillatory electron phonon coupling in Pb/Si(111) deduced by temperature-dependent quantum well states[J]. CHINESE PHYSICS,2005,14(9):1910. |
| APA | Zhang, YF.,Jia, JF.,Han, TZ.,Tang, Z.,Shen, QT.,...&Xue, QK.(2005).Oscillatory electron phonon coupling in Pb/Si(111) deduced by temperature-dependent quantum well states.CHINESE PHYSICS,14(9),1910. |
| MLA | Zhang, YF,et al."Oscillatory electron phonon coupling in Pb/Si(111) deduced by temperature-dependent quantum well states".CHINESE PHYSICS 14.9(2005):1910. |
入库方式： OAI收割
来源：物理研究所
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