Oxide thin films for tunable microwave devices
文献类型：期刊论文
| 作者 | Xi, XX ; Li, HC ; Si, WD ; Sirenko, AA ; Akimov, IA ; Fox, JR ; Clark, AM ; Hao, JH |
| 刊名 | JOURNAL OF ELECTROCERAMICS
 |
| 出版日期 | 2000 |
| 卷号 | 4期号:2-3页码:393 |
| 关键词 | EPITAXIAL LIFT-OFF DIELECTRIC LOSS RAMAN-SCATTERING OXYGEN-VACANCY SRTIO3 TEMPERATURE FERRITE SR1-XCAXTIO3 PEROVSKITES PERFORMANCE |
| ISSN号 | 1385-3449 |
| 通讯作者 | Xi, XX (reprint author), Penn State Univ, Dept Phys, 104 Davey Lab, University Pk, PA 16802 USA. |
| 中文摘要 | Oxide thin films have been studied for frequency and phase agile electronics. The electric-field tuning of microwave devices employs ferroelectrics, while the Magnetic-field tuning uses ferrites. The critical material parameters for ferroelectric thin films are the tunability of the dielectric constant and the dielectric loss. This paper describes the current understanding of the fundamental mechanisms of these properties and the research efforts to improve them in ferroelectric thin films. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50535]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xi, XX,Li, HC,Si, WD,et al. Oxide thin films for tunable microwave devices[J]. JOURNAL OF ELECTROCERAMICS,2000,4(2-3):393. |
| APA | Xi, XX.,Li, HC.,Si, WD.,Sirenko, AA.,Akimov, IA.,...&Hao, JH.(2000).Oxide thin films for tunable microwave devices.JOURNAL OF ELECTROCERAMICS,4(2-3),393. |
| MLA | Xi, XX,et al."Oxide thin films for tunable microwave devices".JOURNAL OF ELECTROCERAMICS 4.2-3(2000):393. |
入库方式： OAI收割
来源：物理研究所
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