Oxygen pressure dependence of physical and electrical properties of LaAlO3 gate dielectric
文献类型：期刊论文
| 作者 | Lu, XB ; Lu, HB ; Dai, JY ; Chen, ZH ; He, M ; Yang, GZ ; Chan, HLW ; Choy, CL |
| 刊名 | MICROELECTRONIC ENGINEERING
 |
| 出版日期 | 2005 |
| 卷号 | 77期号:3-4页码:399 |
| 关键词 | MOLECULAR-BEAM EPITAXY THERMAL-STABILITY AMORPHOUS LAALO3 FILMS DEPOSITION SILICON SI(100) SRTIO3 |
| ISSN号 | 0167-9317 |
| 通讯作者 | Lu, XB (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | High k LaAlO3 (LAO) films were deposited directly on silicon substrates in various oxygen pressures by laser molecular-beam epitaxy technique. The influence of oxygen pressures during film fabrication on the physical and electrical properties of LAO films was studied. High resolution transmission electron microscopy measurements indicate that the thermo stability of LAO films in contact with silicon substrates is greatly affected by oxygen pressures, and thicker interfacial layer would be expected for LAO films deposited in high oxygen pressure. Capacitance-voltage (C-P) and leakage current measurements indicate that the effective oxide thickness, leakage current, flatband voltage and hysteresis loop characteristics are affected by the oxygen pressure during film fabrication. Larger EOT, lower leakage current and smaller hysteresis loop is expected to be obtained for LAO films deposited in higher oxygen pressure or lower vacuum. When oxygen pressure is below or equal to 0.1 Pa, the absolute value of V-FB increases with the decrease of oxygen pressure. When oxygen pressure is above 0.1 Pa, the V-FB value begins to decrease slowly. (c) 2005 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50543]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lu, XB,Lu, HB,Dai, JY,et al. Oxygen pressure dependence of physical and electrical properties of LaAlO3 gate dielectric[J]. MICROELECTRONIC ENGINEERING,2005,77(3-4):399. |
| APA | Lu, XB.,Lu, HB.,Dai, JY.,Chen, ZH.,He, M.,...&Choy, CL.(2005).Oxygen pressure dependence of physical and electrical properties of LaAlO3 gate dielectric.MICROELECTRONIC ENGINEERING,77(3-4),399. |
| MLA | Lu, XB,et al."Oxygen pressure dependence of physical and electrical properties of LaAlO3 gate dielectric".MICROELECTRONIC ENGINEERING 77.3-4(2005):399. |
入库方式： OAI收割
来源：物理研究所
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