Patterned anodic aluminium oxide fabricated with a Ta mask
文献类型：期刊论文
| 作者 | Zhao, XW ; Jiang, P ; Xie, SS ; Feng, JF ; Gao, Y ; Wang, JX ; Liu, DF ; Song, L ; Liu, LF ; Dou, XY ; Luo, SD ; Zhang, ZX ; Xiang, YJ ; Zhou, WY ; Wang, G |
| 刊名 | NANOTECHNOLOGY
 |
| 出版日期 | 2006 |
| 卷号 | 17期号:1页码:35 |
| 关键词 | HEXAGONAL PORE ARRAYS POROUS ALUMINA FILMS GROWTH SURFACES BEHAVIOR WETTABILITY TOPOGRAPHY NANOTUBES SIO2 |
| ISSN号 | 0957-4484 |
| 通讯作者 | Xie, SS (reprint author), Chinese Acad Sci, Grad Sch, Inst Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | Electrochemical anodization was applied to an aluminium (Al) sheet patterned with a metallic tantalum (Ta) mask, which gave rise to the formation of patterned anodic aluminium oxide (AAO). The morphological evolution of the AAO porous structure with anodizing time was characterized by scanning electron microscopy. Lateral anodizing of the Al sheet gradually developed underneath the metallic Ta mask with the increase of anodizing time. This has given us further understanding of the Al anodizing behaviour compared with our previous work with a SiO2 masked Al sheet. By controlling the anodizing time and the size of the metal mask, deep lithography of the Al substrate can be realized, and a mushroom-like Ta-Al microstructure with a high aspect ratio was created on the Al surface after removal of the AAO film. This Ta-Al microstructure has been studied in detail, and it was found to exhibit pronounced hydrophobic properties. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50607]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhao, XW,Jiang, P,Xie, SS,et al. Patterned anodic aluminium oxide fabricated with a Ta mask[J]. NANOTECHNOLOGY,2006,17(1):35. |
| APA | Zhao, XW.,Jiang, P.,Xie, SS.,Feng, JF.,Gao, Y.,...&Wang, G.(2006).Patterned anodic aluminium oxide fabricated with a Ta mask.NANOTECHNOLOGY,17(1),35. |
| MLA | Zhao, XW,et al."Patterned anodic aluminium oxide fabricated with a Ta mask".NANOTECHNOLOGY 17.1(2006):35. |
入库方式： OAI收割
来源：物理研究所
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