Patterned magnetic tunnel junctions with Al conduction layers: Fabrication and reduction of pinhole effect
文献类型：期刊论文
| 作者 | Han, XF ; Yu, ACC |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2004 |
| 卷号 | 95期号:2页码:764 |
| 关键词 | MRAM TECHNOLOGY MAGNETORESISTANCE ELECTRODES MEMORY |
| ISSN号 | 0021-8979 |
| 通讯作者 | Han, XF (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Magnetic tunnel junctions (MTJs), Ta(5 nm)/Al(20 nm)/Ni79Fe21 (5 nm)/Ir22Mn78 (10 nm)/Co75Fe25 (4 nm)/Al(x nm)-oxide/Co75Fe25 (4 nm)/Ni79Fe21 (20 nm)/Ta (5 nm) [x=0.8 and 0.9 nm], with 20 nm thick Al conduction layers were fabricated using magnetron sputtering deposition. Due to the surface roughness of the Al conduction layer, metallic pinholes could easily occur at the barrier layer. Remedies for such a pinhole issue can be solved by a critical underoxidation condition for the Al-oxide tunneling barriers and a postfabrication annealing process of the MTJs at 300 degreesC. A high magnetoresistance ratio of 45%, low resistance-area product of around 10 kOmega mum(2), and sensing layer coercivity of approximately 20 Oe were obtained at room temperature for the annealed MTJs. The results suggest that pinhole defects could be eliminated or significantly reduced with a critical Al-oxide layer fabrication condition together with the annealing process. The MTJ structure after further structural and patterning modifications can be adopted as the cell elements for magnetoresistive random access memory based on the Al wring interconnection in semiconductor integrated circuit techniques. (C) 2004 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50610]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Han, XF,Yu, ACC. Patterned magnetic tunnel junctions with Al conduction layers: Fabrication and reduction of pinhole effect[J]. JOURNAL OF APPLIED PHYSICS,2004,95(2):764. |
| APA | Han, XF,&Yu, ACC.(2004).Patterned magnetic tunnel junctions with Al conduction layers: Fabrication and reduction of pinhole effect.JOURNAL OF APPLIED PHYSICS,95(2),764. |
| MLA | Han, XF,et al."Patterned magnetic tunnel junctions with Al conduction layers: Fabrication and reduction of pinhole effect".JOURNAL OF APPLIED PHYSICS 95.2(2004):764. |
入库方式： OAI收割
来源：物理研究所
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