Patterning Graphene with Zigzag Edges by Self-Aligned Anisotropic Etching
文献类型:期刊论文
作者 | Shi, ZW ; Yang, R ; Zhang, LC ; Wang, Y ; Liu, DH ; Shi, DX ; Wang, EG ; Zhang, GY |
刊名 | ADVANCED MATERIALS
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出版日期 | 2011 |
卷号 | 23期号:27页码:3061 |
关键词 | CARBON NANOTUBES NANORIBBONS FABRICATION STATE |
ISSN号 | 0935-9648 |
通讯作者 | Zhang, GY (reprint author), Chinese Acad Sci, Nanoscale Phys & Device Lab, Inst Phys, Beijing 100190, Peoples R China. |
中文摘要 | A top-down approach for controlled tailoring of graphene nanostructures with zigzag edges is presented. It consists of two key steps: artificial defect patterning and hydrogen-plasma etching. With this approach, various graphene nanostructures with sub-10 nm features and identical zigzag edges are reliably achieved. This approach shows great promise for making future graphene devices or circuits. |
收录类别 | SCI |
资助信息 | Institute of Physics (IOP); Chinese Academy of Sciences (CAS); Science Foundation of CAS; National Science Foundation of China (NSFC) |
语种 | 英语 |
公开日期 | 2013-09-24 |
源URL | [http://ir.iphy.ac.cn/handle/311004/50616] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Shi, ZW,Yang, R,Zhang, LC,et al. Patterning Graphene with Zigzag Edges by Self-Aligned Anisotropic Etching[J]. ADVANCED MATERIALS,2011,23(27):3061. |
APA | Shi, ZW.,Yang, R.,Zhang, LC.,Wang, Y.,Liu, DH.,...&Zhang, GY.(2011).Patterning Graphene with Zigzag Edges by Self-Aligned Anisotropic Etching.ADVANCED MATERIALS,23(27),3061. |
MLA | Shi, ZW,et al."Patterning Graphene with Zigzag Edges by Self-Aligned Anisotropic Etching".ADVANCED MATERIALS 23.27(2011):3061. |
入库方式: OAI收割
来源:物理研究所
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