中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Patterning Graphene with Zigzag Edges by Self-Aligned Anisotropic Etching

文献类型:期刊论文

作者Shi, ZW ; Yang, R ; Zhang, LC ; Wang, Y ; Liu, DH ; Shi, DX ; Wang, EG ; Zhang, GY
刊名ADVANCED MATERIALS
出版日期2011
卷号23期号:27页码:3061
关键词CARBON NANOTUBES NANORIBBONS FABRICATION STATE
ISSN号0935-9648
通讯作者Zhang, GY (reprint author), Chinese Acad Sci, Nanoscale Phys & Device Lab, Inst Phys, Beijing 100190, Peoples R China.
中文摘要A top-down approach for controlled tailoring of graphene nanostructures with zigzag edges is presented. It consists of two key steps: artificial defect patterning and hydrogen-plasma etching. With this approach, various graphene nanostructures with sub-10 nm features and identical zigzag edges are reliably achieved. This approach shows great promise for making future graphene devices or circuits.
收录类别SCI
资助信息Institute of Physics (IOP); Chinese Academy of Sciences (CAS); Science Foundation of CAS; National Science Foundation of China (NSFC)
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/50616]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Shi, ZW,Yang, R,Zhang, LC,et al. Patterning Graphene with Zigzag Edges by Self-Aligned Anisotropic Etching[J]. ADVANCED MATERIALS,2011,23(27):3061.
APA Shi, ZW.,Yang, R.,Zhang, LC.,Wang, Y.,Liu, DH.,...&Zhang, GY.(2011).Patterning Graphene with Zigzag Edges by Self-Aligned Anisotropic Etching.ADVANCED MATERIALS,23(27),3061.
MLA Shi, ZW,et al."Patterning Graphene with Zigzag Edges by Self-Aligned Anisotropic Etching".ADVANCED MATERIALS 23.27(2011):3061.

入库方式: OAI收割

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。