PEDOT:PSS Schottky contacts on annealed ZnO films
文献类型：期刊论文
| 作者 | Zhu, YB ; Hu, W ; Na, J ; He, F ; Zhou, YL ; Chen, C |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2011 |
| 卷号 | 20期号:4 |
| 关键词 | N-GAN ALGAN/GAN INSERTION DIODE |
| ISSN号 | 1674-1056 |
| 通讯作者 | Zhu, YB (reprint author), Beijing Jiaotong Univ, Sch Sci, Beijing 100044, Peoples R China. |
| 中文摘要 | Polycrystalline ZnO and ITO films on SiO(2) substrates are prepared by radio frequency (RF) reactive magnetron sputtering. Schottky contacts are fabricated on ZnO films by spin coating with a high conducting polymer, poly(3, 4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) as the metal electrodes. The current voltage measurements for samples on unannealed ZnO films exhibit rectifying behaviours with a barrier height of 0.72 eV (n = 1.93). The current for the sample is improved by two orders of magnitude at 1 V after annealing ZnO film at 850 degrees C, whose barrier height is 0.75 eV with an ideality factor of 1.12. X-ray diffraction, atomic force microscopy and scanning electron microscopy are used to study the properties of the PEDOT:PSS/ZnO/ITO/SiO(2). The results are useful for applications such as metal semiconductor field-effect transistors and UV photodetectors. |
| 收录类别 | SCI |
| 资助信息 | Fundamental Research Funds for the Central Universities of China [2009JBM098] |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50645]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhu, YB,Hu, W,Na, J,et al. PEDOT:PSS Schottky contacts on annealed ZnO films[J]. CHINESE PHYSICS B,2011,20(4). |
| APA | Zhu, YB,Hu, W,Na, J,He, F,Zhou, YL,&Chen, C.(2011).PEDOT:PSS Schottky contacts on annealed ZnO films.CHINESE PHYSICS B,20(4). |
| MLA | Zhu, YB,et al."PEDOT:PSS Schottky contacts on annealed ZnO films".CHINESE PHYSICS B 20.4(2011). |
入库方式： OAI收割
来源：物理研究所
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