中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Performance-improved nonvolatile memory with aluminum nanocrystals embedded in Al2O3 for high temperature applications

文献类型:期刊论文

作者Xu, ZG ; Huo, ZL ; Zhu, CX ; Cui, YX ; Wang, M ; Zheng, ZW ; Liu, J ; Wang, YM ; Li, FH ; Liu, M
刊名JOURNAL OF APPLIED PHYSICS
出版日期2011
卷号110期号:10
ISSN号0021-8979
通讯作者Liu, M (reprint author), Chinese Acad Sci, Lab Nanofabricat & Novel Devices Integrated Techn, Inst Microelect, Beijing 100029, Peoples R China.
中文摘要In this paper, we demonstrate a charge trapping memory with aluminum nanocrystals (Al- NCs) embedded in Al2O3 high-k dielectric. Compared to metal/Al2O3/SiO2/Si structure, this device exhibits a larger memory window (6.7V at +/- 12 V), faster program/erase speed and good endurance. In particular, data retention is improved greatly both at room temperature and in high-temperature (up to 150 degrees C). The results indicate that the device with the embedding Al-NCs in Al2O3 film has a strong potential for future high-performance nonvolatile memory application. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3662944]
收录类别SCI
资助信息National Basic Research Program of China (973 Program) [2010CB934204]; National Natural Science Foundation of China [60825403, 61176073]; IMECAS; National Science and Technology Major Project [2009ZX-02302-005]
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/50667]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Xu, ZG,Huo, ZL,Zhu, CX,et al. Performance-improved nonvolatile memory with aluminum nanocrystals embedded in Al2O3 for high temperature applications[J]. JOURNAL OF APPLIED PHYSICS,2011,110(10).
APA Xu, ZG.,Huo, ZL.,Zhu, CX.,Cui, YX.,Wang, M.,...&Liu, M.(2011).Performance-improved nonvolatile memory with aluminum nanocrystals embedded in Al2O3 for high temperature applications.JOURNAL OF APPLIED PHYSICS,110(10).
MLA Xu, ZG,et al."Performance-improved nonvolatile memory with aluminum nanocrystals embedded in Al2O3 for high temperature applications".JOURNAL OF APPLIED PHYSICS 110.10(2011).

入库方式: OAI收割

来源:物理研究所

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