Performance-improved nonvolatile memory with aluminum nanocrystals embedded in Al2O3 for high temperature applications
文献类型:期刊论文
| 作者 | Xu, ZG ; Huo, ZL ; Zhu, CX ; Cui, YX ; Wang, M ; Zheng, ZW ; Liu, J ; Wang, YM ; Li, FH ; Liu, M |
| 刊名 | JOURNAL OF APPLIED PHYSICS
![]() |
| 出版日期 | 2011 |
| 卷号 | 110期号:10 |
| ISSN号 | 0021-8979 |
| 通讯作者 | Liu, M (reprint author), Chinese Acad Sci, Lab Nanofabricat & Novel Devices Integrated Techn, Inst Microelect, Beijing 100029, Peoples R China. |
| 中文摘要 | In this paper, we demonstrate a charge trapping memory with aluminum nanocrystals (Al- NCs) embedded in Al2O3 high-k dielectric. Compared to metal/Al2O3/SiO2/Si structure, this device exhibits a larger memory window (6.7V at +/- 12 V), faster program/erase speed and good endurance. In particular, data retention is improved greatly both at room temperature and in high-temperature (up to 150 degrees C). The results indicate that the device with the embedding Al-NCs in Al2O3 film has a strong potential for future high-performance nonvolatile memory application. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3662944] |
| 收录类别 | SCI |
| 资助信息 | National Basic Research Program of China (973 Program) [2010CB934204]; National Natural Science Foundation of China [60825403, 61176073]; IMECAS; National Science and Technology Major Project [2009ZX-02302-005] |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50667] ![]() |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xu, ZG,Huo, ZL,Zhu, CX,et al. Performance-improved nonvolatile memory with aluminum nanocrystals embedded in Al2O3 for high temperature applications[J]. JOURNAL OF APPLIED PHYSICS,2011,110(10). |
| APA | Xu, ZG.,Huo, ZL.,Zhu, CX.,Cui, YX.,Wang, M.,...&Liu, M.(2011).Performance-improved nonvolatile memory with aluminum nanocrystals embedded in Al2O3 for high temperature applications.JOURNAL OF APPLIED PHYSICS,110(10). |
| MLA | Xu, ZG,et al."Performance-improved nonvolatile memory with aluminum nanocrystals embedded in Al2O3 for high temperature applications".JOURNAL OF APPLIED PHYSICS 110.10(2011). |
入库方式: OAI收割
来源:物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

