Perpendicular current-driven magnetization switching in free layer of magnetic tunneling junctions and MRAM
文献类型:期刊论文
| 作者 | Peng, ZL ; Han, XF ; Zhao, SF ; Wei, HX ; Du, GX ; Zhan, WS |
| 刊名 | ACTA PHYSICA SINICA
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| 出版日期 | 2006 |
| 卷号 | 55期号:2页码:860 |
| 关键词 | COHERENT ROTATION MAGNETORESISTANCE |
| ISSN号 | 1000-3290 |
| 通讯作者 | Han, XF (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Natl Key Lab Magnet, Beijing 100080, Peoples R China. |
| 中文摘要 | Comprehensive measurements of electrical transport properties under pressure, thermal conductivity, magnetic susceptibility, and room-temperature compressibility have been used to characterize SrCrO3 and CaCrO3 perovskites synthesized under high pressure. Comparison with other narrow-band perovskite oxides suggests that their anomalous physical properties are correlated with bond-length instabilities caused by the crossover from localized to itinerant electronic behavior. |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50690] ![]() |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Peng, ZL,Han, XF,Zhao, SF,et al. Perpendicular current-driven magnetization switching in free layer of magnetic tunneling junctions and MRAM[J]. ACTA PHYSICA SINICA,2006,55(2):860. |
| APA | Peng, ZL,Han, XF,Zhao, SF,Wei, HX,Du, GX,&Zhan, WS.(2006).Perpendicular current-driven magnetization switching in free layer of magnetic tunneling junctions and MRAM.ACTA PHYSICA SINICA,55(2),860. |
| MLA | Peng, ZL,et al."Perpendicular current-driven magnetization switching in free layer of magnetic tunneling junctions and MRAM".ACTA PHYSICA SINICA 55.2(2006):860. |
入库方式: OAI收割
来源:物理研究所
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