中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Perpendicular current-driven magnetization switching in free layer of magnetic tunneling junctions and MRAM

文献类型:期刊论文

作者Peng, ZL ; Han, XF ; Zhao, SF ; Wei, HX ; Du, GX ; Zhan, WS
刊名ACTA PHYSICA SINICA
出版日期2006
卷号55期号:2页码:860
关键词COHERENT ROTATION MAGNETORESISTANCE
ISSN号1000-3290
通讯作者Han, XF (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Natl Key Lab Magnet, Beijing 100080, Peoples R China.
中文摘要Comprehensive measurements of electrical transport properties under pressure, thermal conductivity, magnetic susceptibility, and room-temperature compressibility have been used to characterize SrCrO3 and CaCrO3 perovskites synthesized under high pressure. Comparison with other narrow-band perovskite oxides suggests that their anomalous physical properties are correlated with bond-length instabilities caused by the crossover from localized to itinerant electronic behavior.
收录类别SCI
语种中文
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/50690]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Peng, ZL,Han, XF,Zhao, SF,et al. Perpendicular current-driven magnetization switching in free layer of magnetic tunneling junctions and MRAM[J]. ACTA PHYSICA SINICA,2006,55(2):860.
APA Peng, ZL,Han, XF,Zhao, SF,Wei, HX,Du, GX,&Zhan, WS.(2006).Perpendicular current-driven magnetization switching in free layer of magnetic tunneling junctions and MRAM.ACTA PHYSICA SINICA,55(2),860.
MLA Peng, ZL,et al."Perpendicular current-driven magnetization switching in free layer of magnetic tunneling junctions and MRAM".ACTA PHYSICA SINICA 55.2(2006):860.

入库方式: OAI收割

来源:物理研究所

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