Phase formation sequence induced by deposition temperatures in Nb/Si multilayers
文献类型：期刊论文
| 作者 | Zhang, M ; Wang, WK |
| 刊名 | JOURNAL OF MATERIALS RESEARCH
 |
| 出版日期 | 1998 |
| 卷号 | 13期号:5页码:1373 |
| 关键词 | INTERFACIAL REACTIONS THIN-FILMS GROWTH-KINETICS INITIAL-STAGE METAL SILICON NUCLEATION (111)SI SYSTEMS SILICIDES |
| ISSN号 | 0884-2914 |
| 通讯作者 | Zhang, M (reprint author), Tsinghua Univ, Dept Mech Engn, Beijing 100083, Peoples R China. |
| 中文摘要 | The phase formation sequence in Nb/Si multilayers formed at different deposition temperatures was investigated by x-ray diffraction (XRD) and transmission electron microscopy (TEM). The amorphous phases were found to form in Nb/Si multilayers deposited at room temperature and 560 degrees C, but the compositions of these two amorphous phases were different. The crystalline Nb(3)Si and Nb(5)Si(3) were formed in Nb/Si multilayers deposited at 180-500 degrees C. The interfacial energy and modified heat of formation are adopted to explain our obtained results. The occurrence of crystalline Nb(5)Si(3), NbSi(2) and amorphous silicide phase was found when the Nb/Si multilayers with Nb(3)Si phase were annealed at 550 degrees C, while only NbSi(2) was found to form when annealing this sample at 700 degrees C. The mobility of Si takes an important role in phase formation in Nb/Si multilayers. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50747]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, M,Wang, WK. Phase formation sequence induced by deposition temperatures in Nb/Si multilayers[J]. JOURNAL OF MATERIALS RESEARCH,1998,13(5):1373. |
| APA | Zhang, M,&Wang, WK.(1998).Phase formation sequence induced by deposition temperatures in Nb/Si multilayers.JOURNAL OF MATERIALS RESEARCH,13(5),1373. |
| MLA | Zhang, M,et al."Phase formation sequence induced by deposition temperatures in Nb/Si multilayers".JOURNAL OF MATERIALS RESEARCH 13.5(1998):1373. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。