Phonon-induced photoconductive response in doped semiconductors
文献类型:期刊论文
作者 | Jin, KJ ; Zhang, JD ; Chen, ZH ; Yang, GZ ; Chen, ZH ; Shi, XH ; Shen, SC |
刊名 | PHYSICAL REVIEW B
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出版日期 | 2001 |
卷号 | 64期号:20 |
关键词 | FANO INTERFERENCE QUANTUM-WELLS RAMAN-SCATTERING SUPERLATTICES EXCITATIONS RESONANCES STATES DONORS SI |
ISSN号 | 0163-1829 |
通讯作者 | Jin, KJ (reprint author), Lund Univ, Dept Phys, Solvegatan 14 A, S-22362 Lund, Sweden. |
中文摘要 | We present an unusual photoconductive response in doped GaAs and InP semiconductor epitaxial layers and demonstrate that such a response is due to the longitudinal optic (LO) phonon-induced Fano resonance instead of the traditional kinetic mechanism. Theoretical calculations based upon the present mechanism are in excellent agreement with the experimental results and the developed formalism should be universally applicable to the related photoconductive processes of other doped semiconductors. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-24 |
源URL | [http://ir.iphy.ac.cn/handle/311004/50891] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Jin, KJ,Zhang, JD,Chen, ZH,et al. Phonon-induced photoconductive response in doped semiconductors[J]. PHYSICAL REVIEW B,2001,64(20). |
APA | Jin, KJ.,Zhang, JD.,Chen, ZH.,Yang, GZ.,Chen, ZH.,...&Shen, SC.(2001).Phonon-induced photoconductive response in doped semiconductors.PHYSICAL REVIEW B,64(20). |
MLA | Jin, KJ,et al."Phonon-induced photoconductive response in doped semiconductors".PHYSICAL REVIEW B 64.20(2001). |
入库方式: OAI收割
来源:物理研究所
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