中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Phonon-induced photoconductive response in doped semiconductors

文献类型:期刊论文

作者Jin, KJ ; Zhang, JD ; Chen, ZH ; Yang, GZ ; Chen, ZH ; Shi, XH ; Shen, SC
刊名PHYSICAL REVIEW B
出版日期2001
卷号64期号:20
关键词FANO INTERFERENCE QUANTUM-WELLS RAMAN-SCATTERING SUPERLATTICES EXCITATIONS RESONANCES STATES DONORS SI
ISSN号0163-1829
通讯作者Jin, KJ (reprint author), Lund Univ, Dept Phys, Solvegatan 14 A, S-22362 Lund, Sweden.
中文摘要We present an unusual photoconductive response in doped GaAs and InP semiconductor epitaxial layers and demonstrate that such a response is due to the longitudinal optic (LO) phonon-induced Fano resonance instead of the traditional kinetic mechanism. Theoretical calculations based upon the present mechanism are in excellent agreement with the experimental results and the developed formalism should be universally applicable to the related photoconductive processes of other doped semiconductors.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/50891]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Jin, KJ,Zhang, JD,Chen, ZH,et al. Phonon-induced photoconductive response in doped semiconductors[J]. PHYSICAL REVIEW B,2001,64(20).
APA Jin, KJ.,Zhang, JD.,Chen, ZH.,Yang, GZ.,Chen, ZH.,...&Shen, SC.(2001).Phonon-induced photoconductive response in doped semiconductors.PHYSICAL REVIEW B,64(20).
MLA Jin, KJ,et al."Phonon-induced photoconductive response in doped semiconductors".PHYSICAL REVIEW B 64.20(2001).

入库方式: OAI收割

来源:物理研究所

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