中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Photoconducting response on bending of individual ZnO nanowires

文献类型:期刊论文

作者Gao, P ; Wang, ZZ ; Liu, KH ; Xu, Z ; Wang, WL ; Bai, XD ; Wang, EG
刊名JOURNAL OF MATERIALS CHEMISTRY
出版日期2009
卷号19期号:7页码:1002
关键词FIELD-EFFECT TRANSISTOR ULTRAVIOLET PHOTODETECTORS SENSING CHARACTERISTICS ROOM-TEMPERATURE TRANSPORT FABRICATION DIODE
ISSN号0959-9428
通讯作者Bai, XD (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要The bending effect of individual zinc oxide (ZnO) nanowires on photoconducting behavior has been investigated by an in situ transmission electron microscopy (TEM) method. By increasing the nanowire bending, the photocurrent of ZnO nanowire under ultraviolet illumination drops dramatically and the photoresponse time becomes much shorter. A possible mechanism has been proposed and discussed. The improved photo response performance by bending ZnO nanowires could be of significance for their optoelectronics and sensor applications.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/50901]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Gao, P,Wang, ZZ,Liu, KH,et al. Photoconducting response on bending of individual ZnO nanowires[J]. JOURNAL OF MATERIALS CHEMISTRY,2009,19(7):1002.
APA Gao, P.,Wang, ZZ.,Liu, KH.,Xu, Z.,Wang, WL.,...&Wang, EG.(2009).Photoconducting response on bending of individual ZnO nanowires.JOURNAL OF MATERIALS CHEMISTRY,19(7),1002.
MLA Gao, P,et al."Photoconducting response on bending of individual ZnO nanowires".JOURNAL OF MATERIALS CHEMISTRY 19.7(2009):1002.

入库方式: OAI收割

来源:物理研究所

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