中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Photogalvanic in ultrathin film of topological insulator

文献类型:期刊论文

作者Wu, QS ; Zhang, SN ; Fang, Z ; Dai, X
刊名PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
出版日期2012
卷号44期号:5页码:895
关键词HGTE QUANTUM-WELLS SINGLE DIRAC CONE BI2SE3 NANORIBBONS SURFACE PHASE
ISSN号1386-9477
通讯作者Wu, QS (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要In this work, we study the photogalvanic effect on an ultrathin film of topological insulator Bi2Se3 family. we find that there is photocurrent when circularly polarized light shines obliquely on the ultrathin film if there is an asymmetric potential between the two surfaces. There is no current when the light is linearly polarized. (C) 2011 Elsevier B.V. All rights reserved.
收录类别SCI
资助信息NSF of China; 973 program of China [2007CB925000]
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/50919]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Wu, QS,Zhang, SN,Fang, Z,et al. Photogalvanic in ultrathin film of topological insulator[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2012,44(5):895.
APA Wu, QS,Zhang, SN,Fang, Z,&Dai, X.(2012).Photogalvanic in ultrathin film of topological insulator.PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,44(5),895.
MLA Wu, QS,et al."Photogalvanic in ultrathin film of topological insulator".PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 44.5(2012):895.

入库方式: OAI收割

来源:物理研究所

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