Photoluminescence and microstructure of the Erbium-Doped hydrogenated amorphous SiOx(0 < x < 2)
文献类型：期刊论文
| 作者 | Liang, JJ ; Chen, WD ; Wang, YQ ; He, J ; Zheng, WM ; Wang, ZG |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2000 |
| 卷号 | 17期号:11页码:838 |
| 关键词 | CRYSTALLINE SILICON LUMINESCENCE ELECTROLUMINESCENCE SEMICONDUCTORS SI |
| ISSN号 | 0256-307X |
| 通讯作者 | Liang, JJ (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. |
| 中文摘要 | The hydrogenated amorphous SiOx films (a-SiOx:H) with various oxygen contents have been prepared using plasma enhanced chemical vapor deposition technique. The films were implanted with erbium and annealed by rapid thermal annealing. An intense photoluminescence (PL) of Er at 1.54 mum has been observed at 77 K and at room temperature. The PL intensity depends strongly on both the oxygen content of the film and the rapid thermal annealing temperature and reaches its maximum if the ratio of O/Si in the film is approximately equal to 1.0 at 77 K and to 1.76 at room temperature. The microstructure of the film also has strong influences on the PL intensity. The PL intensity at 250 K is slightly more than a half of that at 15 K. It means that the temperature quenching effect of the PL intensity is very weak. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50935]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liang, JJ,Chen, WD,Wang, YQ,et al. Photoluminescence and microstructure of the Erbium-Doped hydrogenated amorphous SiOx(0 < x < 2)[J]. CHINESE PHYSICS LETTERS,2000,17(11):838. |
| APA | Liang, JJ,Chen, WD,Wang, YQ,He, J,Zheng, WM,&Wang, ZG.(2000).Photoluminescence and microstructure of the Erbium-Doped hydrogenated amorphous SiOx(0 < x < 2).CHINESE PHYSICS LETTERS,17(11),838. |
| MLA | Liang, JJ,et al."Photoluminescence and microstructure of the Erbium-Doped hydrogenated amorphous SiOx(0 < x < 2)".CHINESE PHYSICS LETTERS 17.11(2000):838. |
入库方式： OAI收割
来源：物理研究所
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