Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires
文献类型：期刊论文
| 作者 | Zeng, XB ; Liao, XB ; Dai, ST ; Wang, B ; Xu, YY ; Xiang, XB ; Hu, ZH ; Diao, HW ; Kong, GL |
| 刊名 | Science and Technology of Nanomaterials - ICMAT 2003
 |
| 出版日期 | 2005 |
| 卷号 | 23页码:137 |
| 关键词 | VISIBLE PHOTOLUMINESCENCE POROUS SILICON AMORPHOUS-SILICON SI SPECTROSCOPY FILMS NANOSTRUCTURES CONFINEMENT GROWTH |
| ISSN号 | 1422-6375 |
| 通讯作者 | Zeng, XB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China. |
| 中文摘要 | We have investigated the crystal structure, magnetization and magnetoresistance of the double perovskite compounds Sr-2(Fe1-xVx)MoO6(0less than or equal to xless than or equal to 0.1). The lattice constants and the cation ordering decrease monotonously with the V content. The Curie temperature, saturation magnetization and low field magnetoresistance of the compounds decrease with increasing x due to the reduced degree of ordering. The resistivity of Sr2FeMoO6 and lightly doped samples shows semiconductive behavior, while the samples with higher doping levels exhibit a semiconductor-metal transition around 80 K. (C) 2004 Elsevier Ltd. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50937]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zeng, XB,Liao, XB,Dai, ST,et al. Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires[J]. Science and Technology of Nanomaterials - ICMAT 2003,2005,23:137. |
| APA | Zeng, XB.,Liao, XB.,Dai, ST.,Wang, B.,Xu, YY.,...&Kong, GL.(2005).Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires.Science and Technology of Nanomaterials - ICMAT 2003,23,137. |
| MLA | Zeng, XB,et al."Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires".Science and Technology of Nanomaterials - ICMAT 2003 23(2005):137. |
入库方式： OAI收割
来源：物理研究所
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