Photoluminescence characterization of Si-doped low-temperature grown GaAs and GaAs/AlGaAs multiple quantum wells
文献类型：期刊论文
| 作者 | Zhang, MH ; Zhang, YF ; Huang, Q ; Bao, CL ; Sun, JM ; Zhou, JM |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2000 |
| 卷号 | 209期号:1页码:37 |
| 关键词 | POINT-DEFECTS ALGAAS BEAM MODULATORS CLUSTERS |
| ISSN号 | 0022-0248 |
| 通讯作者 | Zhang, MH (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The Si-doped low-temperature (LT) grown GaAs and GaAs/AlGaAs multiple quantum well(MQW) structures have been studied by photoluminescence (PL) spectroscopy. The samples were grown at 320 degrees C with different As pressures, then subjected to rapid thermal annealing from 500 to 900 degrees C. Besides the band-edge PL feature from the band-band recombination, a defect-related PL feature has also been observed in both GaAs and GaAs/AlGaAs MQW structures. Deep-level transient spectroscopy measurement shows that the As antisite-like defects exist in the as-grown and 600 degrees C-annealed Si-doped LT-grown GaAs. The different annealing temperature dependence of the band-edge PL feature in two kinds of materials is observed and discussed. The defect-related PL feature may be related to the defect complex consisting of Si and As atoms. (C) 2000 Elsevier Science B.V. All rights reserved. PACS: 78.55.Cr; 61.72.Cc; 71.55.Eq; 61.72.Vv. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50940]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, MH,Zhang, YF,Huang, Q,et al. Photoluminescence characterization of Si-doped low-temperature grown GaAs and GaAs/AlGaAs multiple quantum wells[J]. JOURNAL OF CRYSTAL GROWTH,2000,209(1):37. |
| APA | Zhang, MH,Zhang, YF,Huang, Q,Bao, CL,Sun, JM,&Zhou, JM.(2000).Photoluminescence characterization of Si-doped low-temperature grown GaAs and GaAs/AlGaAs multiple quantum wells.JOURNAL OF CRYSTAL GROWTH,209(1),37. |
| MLA | Zhang, MH,et al."Photoluminescence characterization of Si-doped low-temperature grown GaAs and GaAs/AlGaAs multiple quantum wells".JOURNAL OF CRYSTAL GROWTH 209.1(2000):37. |
入库方式： OAI收割
来源：物理研究所
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