Photoluminescence from Er-doped Si-in-SiNx thin films
文献类型:期刊论文
作者 | Bian, LF ; Zhang, CG ; Chen, WD ; Hsu, CC ; Ma, LB ; Song, R ; Cao, ZX |
刊名 | OPTICAL MATERIALS
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出版日期 | 2007 |
卷号 | 29期号:8页码:1071 |
ISSN号 | 0925-3467 |
中文摘要 | Photoluminescence from Er3+-implanted Si-in-SiN, films emitting efficiently visible light were investigated. A Stark structure in the Er3+ photoluminescence spectrum was observed at room temperature, which reveals more than one site symmetry for the Er3+-centers in the Si-in-SiN, matrix. The correlation between the visible photoluminescence from the silicon nanoparticles and the 1.54 mu m emission from the Er3+-centers was discussed. (c) 2006 Elsevier B.V. All rights reserved. |
收录类别 | SCI |
公开日期 | 2013-09-24 |
源URL | [http://ir.iphy.ac.cn/handle/311004/50944] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Bian, LF,Zhang, CG,Chen, WD,et al. Photoluminescence from Er-doped Si-in-SiNx thin films[J]. OPTICAL MATERIALS,2007,29(8):1071. |
APA | Bian, LF.,Zhang, CG.,Chen, WD.,Hsu, CC.,Ma, LB.,...&Cao, ZX.(2007).Photoluminescence from Er-doped Si-in-SiNx thin films.OPTICAL MATERIALS,29(8),1071. |
MLA | Bian, LF,et al."Photoluminescence from Er-doped Si-in-SiNx thin films".OPTICAL MATERIALS 29.8(2007):1071. |
入库方式: OAI收割
来源:物理研究所
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