中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Photoluminescence from Er-doped Si-in-SiNx thin films

文献类型:期刊论文

作者Bian, LF ; Zhang, CG ; Chen, WD ; Hsu, CC ; Ma, LB ; Song, R ; Cao, ZX
刊名OPTICAL MATERIALS
出版日期2007
卷号29期号:8页码:1071
ISSN号0925-3467
中文摘要Photoluminescence from Er3+-implanted Si-in-SiN, films emitting efficiently visible light were investigated. A Stark structure in the Er3+ photoluminescence spectrum was observed at room temperature, which reveals more than one site symmetry for the Er3+-centers in the Si-in-SiN, matrix. The correlation between the visible photoluminescence from the silicon nanoparticles and the 1.54 mu m emission from the Er3+-centers was discussed. (c) 2006 Elsevier B.V. All rights reserved.
收录类别SCI
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/50944]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Bian, LF,Zhang, CG,Chen, WD,et al. Photoluminescence from Er-doped Si-in-SiNx thin films[J]. OPTICAL MATERIALS,2007,29(8):1071.
APA Bian, LF.,Zhang, CG.,Chen, WD.,Hsu, CC.,Ma, LB.,...&Cao, ZX.(2007).Photoluminescence from Er-doped Si-in-SiNx thin films.OPTICAL MATERIALS,29(8),1071.
MLA Bian, LF,et al."Photoluminescence from Er-doped Si-in-SiNx thin films".OPTICAL MATERIALS 29.8(2007):1071.

入库方式: OAI收割

来源:物理研究所

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