Photoluminescence of low-temperature AlGaAs/GaAs multiple quantum wells
文献类型：期刊论文
| 作者 | Feng, W ; Chen, F ; Huang, Q ; Zhou, JM |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 1997 |
| 卷号 | 175页码:1173 |
| 关键词 | MOLECULAR-BEAM EPITAXY GROWN GAAS |
| ISSN号 | 0022-0248 |
| 通讯作者 | Feng, W (reprint author), CHINESE ACAD SCI,INST PHYS,POB 60336,BEIJING 100080,PEOPLES R CHINA. |
| 中文摘要 | The photoluminescence (PL) of low-temperature-grown AlGaAs/GaAs multiple quantum wells (LT-MQWs) has been investigated and compared with a normal-temperature-grown AlGaAs/GaAs MQW structure (NT-MQWs) implanted with protons. The as-grown LT-MQWs show much more inter!sive PL than the as-implanted NT-MQWs. Upon anneal, the PL from the LT-MQWs and the NT-MQWs exhibits different behaviors. For the NT-MQWs, the PL intensity increases monotonously with rising annealing temperature due to the decrease of implantation-induced defects. By contrast, the PL from the LT-MQWs is drastically quenched, and the PL intensity drops nearly three orders of magnitude after anneal at 600 degrees C. The annealing behavior of the PL from the LT-MQWs is attributed to the formation of As clusters that act as deep trap centers for the photoexcited carriers and cause the quenching of the PL intensity. After anneal, enhanced interface intermixing and roughening have been observed in the LT-MQWs. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50948]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Feng, W,Chen, F,Huang, Q,et al. Photoluminescence of low-temperature AlGaAs/GaAs multiple quantum wells[J]. JOURNAL OF CRYSTAL GROWTH,1997,175:1173. |
| APA | Feng, W,Chen, F,Huang, Q,&Zhou, JM.(1997).Photoluminescence of low-temperature AlGaAs/GaAs multiple quantum wells.JOURNAL OF CRYSTAL GROWTH,175,1173. |
| MLA | Feng, W,et al."Photoluminescence of low-temperature AlGaAs/GaAs multiple quantum wells".JOURNAL OF CRYSTAL GROWTH 175(1997):1173. |
入库方式： OAI收割
来源：物理研究所
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