Photoluminescence study of Si-doped (11(2)over-bar0) a-plane GaN grown on (1(1)over-bar02) r-plane sapphire by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Yu, HB ; Chen, H ; Li, DS ; Han, YJ ; Zheng, XH ; Huang, Q ; Zhou, JM |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2004 |
| 卷号 | 263期号:1-4页码:94 |
| 关键词 | LIGHT-EMITTING-DIODES YELLOW LUMINESCENCE BAND-GAP NITRIDE EPITAXY |
| ISSN号 | 0022-0248 |
| 通讯作者 | Yu, HB (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Reasonable quality Si-doped (11 (2) over bar0) a-plane GaN have been grown by metalorganic chemical vapor deposition on (1 (1) over bar 02) r-plane sapphire substrates. Optical properties of the films were studied by photoluminescence spectroscopy. Our experimental results suggest that not V(Ga) but the V(Ga-)O(N) Complex is the key defect responsible for yellow luminescence in GaN. At 12.9 K, free exciton A, donor bound exciton and exciton bound to neutral acceptor (I(x)), which are similar to (0001) GaN are observed. Different to (0001) GaN, the longitudinal optical and transverse optical phonon replicas are found emerging simultaneously. Another peak at 3.42 eV is interpreted as donor-acceptor pair transition. (C) 2003 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50955]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yu, HB,Chen, H,Li, DS,et al. Photoluminescence study of Si-doped (11(2)over-bar0) a-plane GaN grown on (1(1)over-bar02) r-plane sapphire by metalorganic chemical vapor deposition[J]. JOURNAL OF CRYSTAL GROWTH,2004,263(1-4):94. |
| APA | Yu, HB.,Chen, H.,Li, DS.,Han, YJ.,Zheng, XH.,...&Zhou, JM.(2004).Photoluminescence study of Si-doped (11(2)over-bar0) a-plane GaN grown on (1(1)over-bar02) r-plane sapphire by metalorganic chemical vapor deposition.JOURNAL OF CRYSTAL GROWTH,263(1-4),94. |
| MLA | Yu, HB,et al."Photoluminescence study of Si-doped (11(2)over-bar0) a-plane GaN grown on (1(1)over-bar02) r-plane sapphire by metalorganic chemical vapor deposition".JOURNAL OF CRYSTAL GROWTH 263.1-4(2004):94. |
入库方式： OAI收割
来源：物理研究所
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