Photolurninescence investigation of Be-doped Npn AlGaAs/GaAs heterojunction bipolar transistor structures
文献类型：期刊论文
| 作者 | Shang, XZ ; Niu, PJ ; Guo, WL ; Wang, WX ; Huang, Q ; Zhou, JM |
| 刊名 | PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
 |
| 出版日期 | 2005 |
| 卷号 | 30期号:1-2页码:36 |
| 关键词 | GAAS EPITAXY PHOTOLUMINESCENCE BERYLLIUM DIFFUSION GROWTH |
| ISSN号 | 1386-9477 |
| 通讯作者 | Shang, XZ (reprint author), Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China. |
| 中文摘要 | Highly complex Npn AlGaAs/GaAs single heterojunction bipolar transistor (HBT) layers with Be-doped base were investigated by photoluminescence (PL) spectroscopy. Room temperature PL shows only a broad peak of GaAs due to thermalization; 15 K PL shows five peaks. The peak at similar to 1.481 eV is from a p-type GaAs base, that at similar to 1.517 eV is from a low-doped GaAs layer and that at similar to 1.55 eV is from a high-doped GaAs collector. The that at similar to 1.849eV is due to bound exciton recombination in an AlGaAs emitter, and that at similar to 1.828 eV is due to the acceptor-related transition from the AlGaAs layer. The integrated intensity ratio of these two peaks can be Used to investigate the Be outdiffusion behavior. thus optimizing the growth conditions of base. The DC current gain of the HBT structure with different growth conditions was found to be in good agreement with the PL results. (c) 2005 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50957]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Shang, XZ,Niu, PJ,Guo, WL,et al. Photolurninescence investigation of Be-doped Npn AlGaAs/GaAs heterojunction bipolar transistor structures[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2005,30(1-2):36. |
| APA | Shang, XZ,Niu, PJ,Guo, WL,Wang, WX,Huang, Q,&Zhou, JM.(2005).Photolurninescence investigation of Be-doped Npn AlGaAs/GaAs heterojunction bipolar transistor structures.PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,30(1-2),36. |
| MLA | Shang, XZ,et al."Photolurninescence investigation of Be-doped Npn AlGaAs/GaAs heterojunction bipolar transistor structures".PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 30.1-2(2005):36. |
入库方式： OAI收割
来源：物理研究所
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