Polarity dependence of hexagonal GaN films on two opposite c faces of Al2O3 substrate
文献类型：期刊论文
| 作者 | Han, PD ; Wang, ZG ; Duan, XF ; Zhang, Z |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2001 |
| 卷号 | 78期号:25页码:3974 |
| 关键词 | MOLECULAR-BEAM EPITAXY SURFACE POLARITY SINGLE-CRYSTALS BUFFER LAYER GROWN GAN DEPOSITION MORPHOLOGY QUALITY ZNO |
| ISSN号 | 0003-6951 |
| 通讯作者 | Han, PD (reprint author), Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. |
| 中文摘要 | GaN films were grown in pairs on two opposite c faces of Al2O3 substrate by low-pressure metal-organic vapor phase epitaxy, and studied by scanning electron microscopy and converged beam electron diffraction. It is found that GaN film on the c-Al2O3 whose c face is forward to its crystal seed has [0001] polarity, and the other film on the C-Al2O3 whose c face is backward to its crystal seed has [000 (1) over bar] polarity. (C) 2001 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51088]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Han, PD,Wang, ZG,Duan, XF,et al. Polarity dependence of hexagonal GaN films on two opposite c faces of Al2O3 substrate[J]. APPLIED PHYSICS LETTERS,2001,78(25):3974. |
| APA | Han, PD,Wang, ZG,Duan, XF,&Zhang, Z.(2001).Polarity dependence of hexagonal GaN films on two opposite c faces of Al2O3 substrate.APPLIED PHYSICS LETTERS,78(25),3974. |
| MLA | Han, PD,et al."Polarity dependence of hexagonal GaN films on two opposite c faces of Al2O3 substrate".APPLIED PHYSICS LETTERS 78.25(2001):3974. |
入库方式： OAI收割
来源：物理研究所
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