Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
文献类型：期刊论文
| 作者 | Lv, YJ ; Lin, ZJ ; Zhang, Y ; Meng, LG ; Luan, CB ; Cao, ZF ; Chen, H ; Wang, ZG |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2011 |
| 卷号 | 98期号:12 |
| 关键词 | 2-DIMENSIONAL ELECTRON-GAS INTERFACIAL LAYER MOBILITY |
| ISSN号 | 0003-6951 |
| 通讯作者 | Lin, ZJ (reprint author), Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. |
| 中文摘要 | Using the measured capacitance-voltage curves of Ni Schottky contacts with different contact areas and the current-voltage characteristics for the circular and rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) at low drain-source voltage, we found that the polarization Coulomb field scattering has an important influence on the two-dimensional electron gas (2DEG) electron mobility in both the circular and rectangular AlGaN/AlN/GaN HFETs. Moreover, the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructures is relatively weaker compared to that in AlGaN/GaN heterostructures, which is attributed to the AlN interlayer in AlGaN/AlN/GaN heterostructures to enlarge the average distance between the 2DEG electrons and the polarization charges. (C) 2011 American Institute of Physics. [doi:10.1063/1.3569138] |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [10774090]; National Basic Research Program of China [2007CB936602] |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51094]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lv, YJ,Lin, ZJ,Zhang, Y,et al. Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors[J]. APPLIED PHYSICS LETTERS,2011,98(12). |
| APA | Lv, YJ.,Lin, ZJ.,Zhang, Y.,Meng, LG.,Luan, CB.,...&Wang, ZG.(2011).Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors.APPLIED PHYSICS LETTERS,98(12). |
| MLA | Lv, YJ,et al."Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors".APPLIED PHYSICS LETTERS 98.12(2011). |
入库方式： OAI收割
来源：物理研究所
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