中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition

文献类型:期刊论文

作者Zeng, XB ; Liao, XB ; Diao, HW ; Hu, ZH ; Xu, YY ; Zhang, SB ; Chen, CY ; Chen, WD ; Kong, GL
刊名QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES
出版日期2003
卷号737页码:667
关键词LASER-ABLATION SEMICONDUCTOR NANOWIRES GROWTH MECHANISM EVAPORATION DIAMETER WIRES
ISSN号0272-9172
通讯作者Zeng, XB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China.
中文摘要Polymorphous Si nanowires (SiNWS) have been successfully synthesized on Si wafer by plasma enhanced chemical vapor deposition (PECVD) at 440degreesC,using silane as the Si source and Au as the catalyst. To grow the polymorphous SiNWS preannealing the Si substrate with Au film at 1100 degreesC is needed. The diameters of Si nanowires range from 15 to 100 urn. The structure morphology and chemical composition of the SiNWS have been characterized by high resolution x-ray diffraction, scanning electron microscopy, transmission electron microscopy, as well as energy dispersive x-ray spectroscopy. A few interesting nanowires with Au nanoclusters uniformly distributed in the body of the wire were also produced by this technique.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/51147]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Zeng, XB,Liao, XB,Diao, HW,et al. Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition[J]. QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES,2003,737:667.
APA Zeng, XB.,Liao, XB.,Diao, HW.,Hu, ZH.,Xu, YY.,...&Kong, GL.(2003).Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition.QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES,737,667.
MLA Zeng, XB,et al."Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition".QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES 737(2003):667.

入库方式: OAI收割

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。