中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Positive magnetoresistance in heterostructure composed of two oxides

文献类型:期刊论文

作者Jin, KJ ; Lu, HB ; Zhou, QL ; Zhao, K ; Chen, ZH ; Cheng, BL ; Yang, GZ
刊名SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
出版日期2005
卷号6期号:7页码:833
关键词MAGNETIC TUNNEL-JUNCTIONS MOLECULAR-BEAM EPITAXY NB-DOPED SRTIO3 ELECTRONIC-STRUCTURE COLOSSAL MAGNETORESISTANCE TRILAYER JUNCTIONS LA1-XSRXMNO3 TEMPERATURE SPECTROSCOPY MANGANITES
ISSN号1468-6996
通讯作者Jin, KJ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要A positive magnetoresistance (MR) has been discovered in the epitaxial p-n heterostructure we fabricated with Sr-doped LaMnO3 and Nb-doped SrTiO3 by laser molecular-beam epitaxy. The MR dependence on the bias voltage has been displayed at the temperature of 130 and 190 K. The mechanism causing the unusual positive MR is proposed as the creation of the region near the interface with electron filling in the t(2g) spin-down band in La0.9Sr0.1MnO3. Other puzzling MR features with bias voltage, temperature are well explained by the present scenario. (c) 2005 Elsevier Ltd. All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/51162]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Jin, KJ,Lu, HB,Zhou, QL,et al. Positive magnetoresistance in heterostructure composed of two oxides[J]. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS,2005,6(7):833.
APA Jin, KJ.,Lu, HB.,Zhou, QL.,Zhao, K.,Chen, ZH.,...&Yang, GZ.(2005).Positive magnetoresistance in heterostructure composed of two oxides.SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS,6(7),833.
MLA Jin, KJ,et al."Positive magnetoresistance in heterostructure composed of two oxides".SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 6.7(2005):833.

入库方式: OAI收割

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。