Positive temperature coefficient resistance and humidity sensing properties of Cd-doped ZnO nanowires
文献类型：期刊论文
| 作者 | Wan, Q ; Li, QH ; Chen, YJ ; Wang, TH ; He, XL ; Gao, XG ; Li, JP |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2004 |
| 卷号 | 84期号:16页码:3085 |
| 关键词 | NANOSTRUCTURES SEMICONDUCTOR EVAPORATION FILMS |
| ISSN号 | 0003-6951 |
| 通讯作者 | Wan, Q (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Cd-doped ZnO nanowires in mass production were synthesized by evaporating metal zinc (Zn) and cadmium (Cd) at 900degreesC. Devices using the synthesized nanowires were fabricated on microstructured substrates. Cd-doped ZnO nanowires show a clear positive temperature coefficient of resistance effect, which is quite abnormal as compared to pure ZnO nanowires. At room temperature, resistance change of more than three orders of magnitude was measured when Cd-doped ZnO nanowire device was exposed to a moisture pulse of 95% relative humidity. (C) 2004 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51164]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wan, Q,Li, QH,Chen, YJ,et al. Positive temperature coefficient resistance and humidity sensing properties of Cd-doped ZnO nanowires[J]. APPLIED PHYSICS LETTERS,2004,84(16):3085. |
| APA | Wan, Q.,Li, QH.,Chen, YJ.,Wang, TH.,He, XL.,...&Li, JP.(2004).Positive temperature coefficient resistance and humidity sensing properties of Cd-doped ZnO nanowires.APPLIED PHYSICS LETTERS,84(16),3085. |
| MLA | Wan, Q,et al."Positive temperature coefficient resistance and humidity sensing properties of Cd-doped ZnO nanowires".APPLIED PHYSICS LETTERS 84.16(2004):3085. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。