Precise microfabrication of wide band gap semiconductors (SiC and GaN) by VUV-UV multiwavelength laser ablation
文献类型：期刊论文
| 作者 | Zhang, J ; Sugioka, K ; Wada, S ; Tashiro, H ; Toyoda, K ; Midorikawa, K |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 1998 |
| 卷号 | 127页码:793 |
| ISSN号 | 0169-4332 |
| 通讯作者 | Zhang, J (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | An X-ray reflectivity (XR) study of the dynamic evolution of the film surface was carried out for molybdenum (Mo) sputter-deposited onto silicon substrates. The Mo-air interface width grows with time, and exhibits a power law behavior. The growth exponent beta is found to be 0.42. The time-invariant self-affine behavior an the short-range scale has also been observed, and is consistent with the dynamic scaling theory. The roughness exponent alpha is found to be 0.89 +/- 0.05. Scanning tunneling microscopy (STM) was also used to characterize the surface and showed good agreement with the XR measurements. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51219]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, J,Sugioka, K,Wada, S,et al. Precise microfabrication of wide band gap semiconductors (SiC and GaN) by VUV-UV multiwavelength laser ablation[J]. APPLIED SURFACE SCIENCE,1998,127:793. |
| APA | Zhang, J,Sugioka, K,Wada, S,Tashiro, H,Toyoda, K,&Midorikawa, K.(1998).Precise microfabrication of wide band gap semiconductors (SiC and GaN) by VUV-UV multiwavelength laser ablation.APPLIED SURFACE SCIENCE,127,793. |
| MLA | Zhang, J,et al."Precise microfabrication of wide band gap semiconductors (SiC and GaN) by VUV-UV multiwavelength laser ablation".APPLIED SURFACE SCIENCE 127(1998):793. |
入库方式： OAI收割
来源：物理研究所
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