Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique
文献类型：期刊论文
| 作者 | Zhang, CG ; Chen, WD ; Bian, LF ; Song, SF ; Hsu, CC |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2006 |
| 卷号 | 252期号:6页码:2153 |
| 关键词 | NITRIDE THIN-FILMS TEMPERATURE SUBSTRATE SI(111) |
| ISSN号 | 0169-4332 |
| 通讯作者 | Zhang, CG (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China. |
| 中文摘要 | Radio frequency magnetron sputtering/post-carbonized-reaction technique was adopted to prepare good-quality GaN films on Al2O3(0 0 0 1) substrates. The sputtered Ga2O3 film doped with carbon was used as the precursor for GaN growth. X-ray diffraction (XRD) pattern reveals that the film consists of hexagonal wurtzite GaN. X-ray photoelectron spectroscopy (XPS) shows that no oxygen can be detected. Electrical and room-temperature photoluminescence measurements show that good-quality polycrystalline GaN films were successfully grown on Al2O3(0 0 0 1) substrates. (c) 2005 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51255]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, CG,Chen, WD,Bian, LF,et al. Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique[J]. APPLIED SURFACE SCIENCE,2006,252(6):2153. |
| APA | Zhang, CG,Chen, WD,Bian, LF,Song, SF,&Hsu, CC.(2006).Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique.APPLIED SURFACE SCIENCE,252(6),2153. |
| MLA | Zhang, CG,et al."Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique".APPLIED SURFACE SCIENCE 252.6(2006):2153. |
入库方式： OAI收割
来源：物理研究所
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