Preparation and characterizations of bulk GaN crystals
文献类型：期刊论文
| 作者 | Song, YT ; Chen, XL ; Wang, WJ ; Yuan, WX ; Cao, YG ; Wu, X |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2004 |
| 卷号 | 260期号:3-4页码:327 |
| 关键词 | NA FLUX METHOD SINGLE-CRYSTALS GROWTH MORPHOLOGY LI3N MELT |
| ISSN号 | 0022-0248 |
| 通讯作者 | Song, YT (reprint author), Chinese Acad Sci, Nanometer Phys & Device Lab, Ctr Condensed Matter Phys, Inst Phys, POB 60350, Beijing 100080, Peoples R China. |
| 中文摘要 | Magnetic transitions and the magnetoresistance (MR) effect of the HfFe6Ge6-type Y1-xCexMn6Sn6 (x=0.1-0.3) compounds have been investigated in the temperature range of 5-385 K. Y0.9Ce0.1Mn6Sn6 and Y0.825Ce0.175Mn6Sn6 show antiferromagnetism and Y0.7Ce0.3Mn6Sn6 undergoes an antiferromagnetic (AFM) to ferrimagnetic (Fi) transition with increasing temperature. The metamagnetic transition from helical antiferromagnetism to ferrimagnetism can be also induced by an applied field for those compounds. The metamagnetic transition field decreases with increasing Ce content, such as from 25 kOe for x=0.1 to 11 kOe for x=0.3 at 5 K. The giant MR (GMR) effect for Y1-xCexMn6Sn6 (x=0.1-0.3) is observed with metamagnetic behaviour, such as -37% at 5 K under a field of 50 kOe for the compounds (x=0.175 and 0.3). It is found that the MR behaviour for Y0.7Ce0.3Mn6Sn6 in the Fi state follows the magnetic-field power law MR proportional to-H-q at a fixed temperature, and obeys the relationship MR=-[alpha+beta/(T+gamma)] under a fixed magnetic field. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51271]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Song, YT,Chen, XL,Wang, WJ,et al. Preparation and characterizations of bulk GaN crystals[J]. JOURNAL OF CRYSTAL GROWTH,2004,260(3-4):327. |
| APA | Song, YT,Chen, XL,Wang, WJ,Yuan, WX,Cao, YG,&Wu, X.(2004).Preparation and characterizations of bulk GaN crystals.JOURNAL OF CRYSTAL GROWTH,260(3-4),327. |
| MLA | Song, YT,et al."Preparation and characterizations of bulk GaN crystals".JOURNAL OF CRYSTAL GROWTH 260.3-4(2004):327. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。