Preparation and properties of MgB2 thin films on LaAlO3 substrates by chemical vapour deposition
文献类型：期刊论文
| 作者 | Wang, SF ; Zhou, YL ; Zhu, YB ; Liu, Z ; Zhang, Q ; Chen, ZH ; Lu, HB ; Dai, SY ; Yang, GZ |
| 刊名 | SUPERCONDUCTOR SCIENCE & TECHNOLOGY
 |
| 出版日期 | 2003 |
| 卷号 | 16期号:7页码:748 |
| 关键词 | SUPERCONDUCTING MGB2 GROWTH JUMPS |
| ISSN号 | 0953-2048 |
| 通讯作者 | Wang, SF (reprint author), Chinese Acad Sci, Inst Phys, Lab Opt Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Superconducting MgB2 thin films have been prepared on single crystal LaAlO3 (001) substrates by an improved chemical vapour deposition technique. First, boron precursor films were grown on LaAlO3 (001) substrates by chemical vapour deposition using B2H6 as a boron source. Magnesium was then incorporated into the films during a post-annealing process in the presence of high purity magnesium bulk at 890 degreesC for 40 min. The resultant MgB2 films on LaAlO3 substrates showed a random orientation with dense and well-formed grains in the films. Resistance and do magnetization measurements of the films revealed a sharp superconducting zero resistance transition temperature of 37.5 K, while magnetization hysteresis measurements yielded critical current density J(c) of 2.6 x 10(7) A cm(-2) at 15 K in zero field. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51291]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, SF,Zhou, YL,Zhu, YB,et al. Preparation and properties of MgB2 thin films on LaAlO3 substrates by chemical vapour deposition[J]. SUPERCONDUCTOR SCIENCE & TECHNOLOGY,2003,16(7):748. |
| APA | Wang, SF.,Zhou, YL.,Zhu, YB.,Liu, Z.,Zhang, Q.,...&Yang, GZ.(2003).Preparation and properties of MgB2 thin films on LaAlO3 substrates by chemical vapour deposition.SUPERCONDUCTOR SCIENCE & TECHNOLOGY,16(7),748. |
| MLA | Wang, SF,et al."Preparation and properties of MgB2 thin films on LaAlO3 substrates by chemical vapour deposition".SUPERCONDUCTOR SCIENCE & TECHNOLOGY 16.7(2003):748. |
入库方式： OAI收割
来源：物理研究所
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