Preparation of PZT on diamond by pulsed laser deposition with Al2O3 buffer layer
文献类型：期刊论文
| 作者 | Qing, W ; Zhang, NL ; Wang, LW ; Shen, QW ; Lin, CL |
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2002 |
| 卷号 | 415期号:1-2页码:64 |
| 关键词 | LEAD-ZIRCONATE-TITANATE THIN-FILMS |
| ISSN号 | 0040-6090 |
| 通讯作者 | Qing, W (reprint author), Acad Sinica, Shanghai Inst Met, Shanghai 200050, Peoples R China. |
| 中文摘要 | For the purpose of broad-bandwidth high frequency surface acoustic wave devices fabrication, we report on the successful preparation of Pb(Zr0.52Ti0.48)O-3 (PZT) films by pulsed laser deposition (PLD) process on (1 1 1)-oriented polycrystalline diamond substrates with aluminum oxide (Al2O3) as buffer layer. Al2O3 was deposited on diamond substrates by high-vacuum electron-beam evaporation method at 200 degreesC. Then PLD technique was used for PZT deposition. The chemical states of Al and O in Al2O3 were investigated by X-ray photoelectron spectroscopy. The surface morphology of Al2O3 and PZT films was studied by the atom force microscopy image. X-ray diffraction results showed that before annealing, 350 degreesC-prepared PZT was amorphous and 550 degreesC-prepared PZT was (2 2 2)-oriented pyrochlore phase PZT After rapid thermal annealing at 650 degreesC, (1 0 1)-oriented pure perovskite phase PZT could be obtained from the 350 degreesC-prepared PZT film. (C) 2002 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51347]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Qing, W,Zhang, NL,Wang, LW,et al. Preparation of PZT on diamond by pulsed laser deposition with Al2O3 buffer layer[J]. THIN SOLID FILMS,2002,415(1-2):64. |
| APA | Qing, W,Zhang, NL,Wang, LW,Shen, QW,&Lin, CL.(2002).Preparation of PZT on diamond by pulsed laser deposition with Al2O3 buffer layer.THIN SOLID FILMS,415(1-2),64. |
| MLA | Qing, W,et al."Preparation of PZT on diamond by pulsed laser deposition with Al2O3 buffer layer".THIN SOLID FILMS 415.1-2(2002):64. |
入库方式： OAI收割
来源：物理研究所
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