Preparation of silicon carbide nitride films on Si substrate by pulsed high-energy density plasma
文献类型：期刊论文
| 作者 | Li, XM ; Yang, SZ ; Wu, XF |
| 刊名 | JOURNAL OF UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING
 |
| 出版日期 | 2006 |
| 卷号 | 13期号:3页码:272 |
| 关键词 | THIN-FILMS NITROGEN XPS CARBON IMPLANTATION SURFACE |
| ISSN号 | 1005-8850 |
| 通讯作者 | Li, XM (reprint author), Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China. |
| 中文摘要 | Thin films of silicon carbide nitride (SiCN) were prepared on (111) oriented silicon substrates by pulsed high-energy density plasma (PHEDP). The evolution of the chemical bonding states between silicon, nitrogen and carbon was investigated as a function of discharge voltage using X-ray photoelectron spectroscopy. With an increase in discharge voltage both the C 1s and N 1s spectra shift to lower binding energy due to the formation of C-Si and N-Si bonds. The Si-C-N bonds were observed in the deconvolved C 1s and N Is spectra. The X-ray diffractometer (XRD) results show that there were no crystals in the films. The thickness of the films was approximately 1-2 gm with scanning electron microscopy (SEM). |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51350]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, XM,Yang, SZ,Wu, XF. Preparation of silicon carbide nitride films on Si substrate by pulsed high-energy density plasma[J]. JOURNAL OF UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING,2006,13(3):272. |
| APA | Li, XM,Yang, SZ,&Wu, XF.(2006).Preparation of silicon carbide nitride films on Si substrate by pulsed high-energy density plasma.JOURNAL OF UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING,13(3),272. |
| MLA | Li, XM,et al."Preparation of silicon carbide nitride films on Si substrate by pulsed high-energy density plasma".JOURNAL OF UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING 13.3(2006):272. |
入库方式： OAI收割
来源：物理研究所
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