Preparation of Ta(C)N films by pulsed high energy density plasma
文献类型：期刊论文
| 作者 | Feng, WR ; Chen, GL ; Zhang, Y ; Gu, WC ; Zhang, GL ; Niu, EW ; Liu, CZ ; Yang, SZ |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2007 |
| 卷号 | 40期号:7页码:2132 |
| ISSN号 | 0022-3727 |
| 中文摘要 | The pulsed high energy density plasma (PHEDP) is generated in the working gas due to a high-voltage high-current discharge, within a coaxial gun. In PHEDP surface modification, discharge is applied for preparing the amorphous and nanostructured high-melting materials as thin films deposited on various substrates. In this investigation, Ta(C)N films were deposited using PHEDP on stainless steel. Pure tantalum and graphite were used as the inner and outer electrodes of the PHEDP coaxial gun, respectively. Nitrogen was used as the working gas and also one of the reactants. Preliminary study on the films prepared under different conditions shows that the formation of Ta(C) N is drastically voltage dependent. At lower gun voltage, no Ta(C) N was detected in the films; when the gun voltage reaches or exceeds 3.0 kV, Ta(C) N occurred. The films are composed of densely stacked nanocrystallines with diameter less than 30 nm, and some grains are within 10 nm in diameter. |
| 收录类别 | SCI |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51355]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Feng, WR,Chen, GL,Zhang, Y,et al. Preparation of Ta(C)N films by pulsed high energy density plasma[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2007,40(7):2132. |
| APA | Feng, WR.,Chen, GL.,Zhang, Y.,Gu, WC.,Zhang, GL.,...&Yang, SZ.(2007).Preparation of Ta(C)N films by pulsed high energy density plasma.JOURNAL OF PHYSICS D-APPLIED PHYSICS,40(7),2132. |
| MLA | Feng, WR,et al."Preparation of Ta(C)N films by pulsed high energy density plasma".JOURNAL OF PHYSICS D-APPLIED PHYSICS 40.7(2007):2132. |
入库方式： OAI收割
来源：物理研究所
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