Pressure effect on diamond nucleation in a hot-filament CVD system
文献类型：期刊论文
| 作者 | Lee, ST ; Lam, YW ; Lin, ZD ; Chen, Y ; Chen, QJ |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 1997 |
| 卷号 | 55期号:23页码:15937 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION MICROWAVE-PLASMA GROWTH FILMS SILICON |
| ISSN号 | 0163-1829 |
| 通讯作者 | Lee, ST (reprint author), CITY UNIV HONG KONG,DEPT PHYS & MAT SCI,KOWLOON,HONG KONG. |
| 中文摘要 | Using extraordinarily low pressure (0.1-1 Torr) we obtained high-density nucleation of diamond on mirror-polished silicon in a hot-filament chemical vapor deposition (HF-CVD) system. A diamond nuclei density as high as 10(10)-10(11) cm(-2) was achieved, which was comparable to the largest nuclei density obtained in a microwave-plasma chemical vapor deposition system. The low-pressure nucleation technique and the pressure effect on diamond nucleation were discussed in detail based on molecular dynamics. The enhanced nucleation at low pressure was attributed to an increased mean free path, which gave rise to an increased concentration of nucleating species at the substrate and other beneficial nucleating factors. The present work suggests that very low pressure may be an effective approach to nucleate and grow diamond films on untreated substrates via HF-CVD. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51395]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lee, ST,Lam, YW,Lin, ZD,et al. Pressure effect on diamond nucleation in a hot-filament CVD system[J]. PHYSICAL REVIEW B,1997,55(23):15937. |
| APA | Lee, ST,Lam, YW,Lin, ZD,Chen, Y,&Chen, QJ.(1997).Pressure effect on diamond nucleation in a hot-filament CVD system.PHYSICAL REVIEW B,55(23),15937. |
| MLA | Lee, ST,et al."Pressure effect on diamond nucleation in a hot-filament CVD system".PHYSICAL REVIEW B 55.23(1997):15937. |
入库方式： OAI收割
来源：物理研究所
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