Pressure-induced electron topological transitions in Ba-doped Si clathrate
文献类型：期刊论文
| 作者 | Tse, JS ; Yang, L ; Zhang, SJ ; Jin, CQ ; Sahle, CJ ; Sternemann, C ; Nyrow, A ; Giordano, V ; Jiang, JZ ; Yamanaka, S ; Desgreniers, S ; Tulk, CA |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2011 |
| 卷号 | 84期号:18 |
| 关键词 | THERMAL-CONDUCTIVITY SUPERCONDUCTIVITY SILICON EXCITATIONS SCATTERING HYDRATE BA8SI46 GLASS |
| ISSN号 | 1098-0121 |
| 通讯作者 | Tse, JS (reprint author), Univ Saskatchewan, Dept Phys & Engn Phys, Saskatoon, SK S7N 5E2, Canada. |
| 中文摘要 | Ba8Si46 is the archetype of the Si clathrates family. X-ray diffractions have revealed an unusual homothetic isostructural transition at similar to 14-16 GPa. Raman experiments, however, suggested even more transitions at lower pressure. We present evidence showing that successive electronic topological transitions are responsible for the transformations. It is shown that the electronic structure of Ba8Si46 is easily perturbed by the environment. Reverse Monte Carlo calculations and in-situ resistivity measurements revealed continual changes in the structure and electrical properties upon compression. This finding is corroborated by results of x-ray Raman scattering study in the vicinity of the Ba N-4,N-5 and Si L-2,L-3 absorption edges. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51439]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Tse, JS,Yang, L,Zhang, SJ,et al. Pressure-induced electron topological transitions in Ba-doped Si clathrate[J]. PHYSICAL REVIEW B,2011,84(18). |
| APA | Tse, JS.,Yang, L.,Zhang, SJ.,Jin, CQ.,Sahle, CJ.,...&Tulk, CA.(2011).Pressure-induced electron topological transitions in Ba-doped Si clathrate.PHYSICAL REVIEW B,84(18). |
| MLA | Tse, JS,et al."Pressure-induced electron topological transitions in Ba-doped Si clathrate".PHYSICAL REVIEW B 84.18(2011). |
入库方式： OAI收割
来源：物理研究所
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