Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector
文献类型：期刊论文
| 作者 | Sun, JD ; Qin, H ; Lewis, RA ; Sun, YF ; Zhang, XY ; Cai, Y ; Wu, DM ; Zhang, BS |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 100期号:17 |
| 关键词 | EFFECT TRANSISTORS RADIATION |
| ISSN号 | 0003-6951 |
| 通讯作者 | Sun, JD (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, 398 Ruoshui Rd, Suzhou 215123, Jiangsu, Peoples R China. |
| 中文摘要 | In our previous work [Sun et al., Appl. Phys. Lett. 100, 013506 (2012)], we inferred the existence of localized self-mixing in an antenna-coupled field-effect terahertz detector. In this Letter, we report a quasistatic self-mixing model taking into account the localized terahertz fields and its verification by comparing the simulated results with the experimental data in a two-dimensional space of the gate voltage and the drain/source bias. The model well describes the detector characteristics: not only the magnitude, but also the polarity, of the photocurrent can be tuned. The existence of strongly localized self-mixing in such detectors is confirmed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4705306] |
| 收录类别 | SCI |
| 资助信息 | National Basic Research Program of China [G2009CB929303]; Chinese Academy of Sciences [Y0BAQ31001, KJCX2-EW-705, 2010T2J07]; National Natural Science Foundation of China [60871077] |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51464]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Sun, JD,Qin, H,Lewis, RA,et al. Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector[J]. APPLIED PHYSICS LETTERS,2012,100(17). |
| APA | Sun, JD.,Qin, H.,Lewis, RA.,Sun, YF.,Zhang, XY.,...&Zhang, BS.(2012).Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector.APPLIED PHYSICS LETTERS,100(17). |
| MLA | Sun, JD,et al."Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector".APPLIED PHYSICS LETTERS 100.17(2012). |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。