Probing tunnel barrier shape and its effects on inversed tunneling magnetoresistance at high bias
文献类型：期刊论文
| 作者 | Sheng, WT ; Wang, WG ; Xiang, XH ; Shen, F ; Li, FF ; Zhu, T ; Zhang, Z ; Li, ZZ ; Du, J ; Hu, A ; Xiao, JQ |
| 刊名 | JOURNAL OF ELECTRONIC MATERIALS
 |
| 出版日期 | 2004 |
| 卷号 | 33期号:11页码:1274 |
| 关键词 | SPIN POLARIZATION JUNCTIONS CONDUCTANCE INTERFACE FILMS |
| ISSN号 | 0361-5235 |
| 通讯作者 | Sheng, WT (reprint author), Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China. |
| 中文摘要 | We have used an electron holography (EH) technique to directly probe the potential profile of tunnel barriers in magnetic tunnel junctions (MTJs). Barriers with under-, optimum-, or over-oxidized condition have been investigated. One important finding is that there is always slight oxidation of the top electrode because of film morphology. Sharp interfaces can be achieved in the bottom interface of optimally oxidized barrier or both interfaces in MTJs with under-oxidized barriers. We also demonstrate, theoretically and experimentally, how barrier shape affects the bias dependence and, in low barrier height case, result in inversed tunneling magnetoresistance (TMR) at high bias. The mechanism is very different from that responsible for inversed TMR in all biases. The finding leads to the possibilities of achieving better signals at high bias in real applications. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51479]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Sheng, WT,Wang, WG,Xiang, XH,et al. Probing tunnel barrier shape and its effects on inversed tunneling magnetoresistance at high bias[J]. JOURNAL OF ELECTRONIC MATERIALS,2004,33(11):1274. |
| APA | Sheng, WT.,Wang, WG.,Xiang, XH.,Shen, F.,Li, FF.,...&Xiao, JQ.(2004).Probing tunnel barrier shape and its effects on inversed tunneling magnetoresistance at high bias.JOURNAL OF ELECTRONIC MATERIALS,33(11),1274. |
| MLA | Sheng, WT,et al."Probing tunnel barrier shape and its effects on inversed tunneling magnetoresistance at high bias".JOURNAL OF ELECTRONIC MATERIALS 33.11(2004):1274. |
入库方式： OAI收割
来源：物理研究所
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